MBE growth of GaAs AlGaAs(AlAs) quantum well and superlattice structures

Zonggui Chen; Dianzhau Sun; Jiben Liang; Zhongying Xu; Yunheng Huang; Weikun Ge; Meiying Kong

doi:10.1016/0749-6036(87)90080-2

MBE growth of GaAs AlGaAs(AlAs) quantum well and superlattice structures

Zonggui Chen^*, Dianzhau Sun, Jiben Liang, Zhongying Xu, Yunheng Huang, Weikun Ge, Meiying Kong

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

Abstract

MBE is the most highly developed technique to prepare ultra-thin multilayer heterostructures. In this paper, we report that high-quality quantum well and superlattice structures with controllable layer thicknesses as thin as one monolayer and with ideally abrupt GaAs Al_xGa_1-xAs interfaces have been obtained by a home-made MBE system and investigated from the view-point of crystallography and optical properties.

Original language	English
Pages (from-to)	325-328
Number of pages	4
Journal	Superlattices and Microstructures
Volume	3
Issue number	3
DOIs	https://doi.org/10.1016/0749-6036(87)90080-2
Publication status	Published - 1987
Externally published	Yes

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@article{4f12dbff148949e392e42a5b7ef14857,

title = "MBE growth of GaAs AlGaAs(AlAs) quantum well and superlattice structures",

abstract = "MBE is the most highly developed technique to prepare ultra-thin multilayer heterostructures. In this paper, we report that high-quality quantum well and superlattice structures with controllable layer thicknesses as thin as one monolayer and with ideally abrupt GaAs AlxGa1-xAs interfaces have been obtained by a home-made MBE system and investigated from the view-point of crystallography and optical properties.",

author = "Zonggui Chen and Dianzhau Sun and Jiben Liang and Zhongying Xu and Yunheng Huang and Weikun Ge and Meiying Kong",

year = "1987",

doi = "10.1016/0749-6036(87)90080-2",

language = "English",

volume = "3",

pages = "325--328",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "3",

}

TY - JOUR

T1 - MBE growth of GaAs AlGaAs(AlAs) quantum well and superlattice structures

AU - Chen, Zonggui

AU - Sun, Dianzhau

AU - Liang, Jiben

AU - Xu, Zhongying

AU - Huang, Yunheng

AU - Ge, Weikun

AU - Kong, Meiying

PY - 1987

Y1 - 1987

N2 - MBE is the most highly developed technique to prepare ultra-thin multilayer heterostructures. In this paper, we report that high-quality quantum well and superlattice structures with controllable layer thicknesses as thin as one monolayer and with ideally abrupt GaAs AlxGa1-xAs interfaces have been obtained by a home-made MBE system and investigated from the view-point of crystallography and optical properties.

AB - MBE is the most highly developed technique to prepare ultra-thin multilayer heterostructures. In this paper, we report that high-quality quantum well and superlattice structures with controllable layer thicknesses as thin as one monolayer and with ideally abrupt GaAs AlxGa1-xAs interfaces have been obtained by a home-made MBE system and investigated from the view-point of crystallography and optical properties.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1987J698800023

UR - https://www.scopus.com/pages/publications/0023249540

U2 - 10.1016/0749-6036(87)90080-2

DO - 10.1016/0749-6036(87)90080-2

M3 - Journal Article

AN - SCOPUS:0023249540

SN - 0749-6036

VL - 3

SP - 325

EP - 328

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 3

ER -

MBE growth of GaAs AlGaAs(AlAs) quantum well and superlattice structures

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