TY - JOUR
T1 - MEASUREMENT-BASED CHARGE SHEET CAPACITANCE MODEL OF SHORT-CHANNEL MOSFET'S FOR SPICE.
AU - Park, Hong June
AU - Ko, Ping Keung
AU - Hu, Chenming
PY - 1986
Y1 - 1986
N2 - Based on the surface potential formulation, a charge-sheet capacitance model for short-channel MOSFETs has been developed and implemented in SPICE. No iterations are needed to find the surface potential. The model equations are charge-based and include the drift velocity saturation, the diffusion current, the effect of the bulk charge, the channel length modulation, and the channel side fringing field capacitances. As a byproduct of the development of this capacitance model, an analytic charge-sheet current model has been obtained. The current, charges, their first derivatives (conductance and capacitance), and second derivatives are continuous over all the operating regions. An automatic direct-on-wafer off-chip capacitance measurement system with 14 aF rms resolution has been developed for performing the model parameter extraction.
AB - Based on the surface potential formulation, a charge-sheet capacitance model for short-channel MOSFETs has been developed and implemented in SPICE. No iterations are needed to find the surface potential. The model equations are charge-based and include the drift velocity saturation, the diffusion current, the effect of the bulk charge, the channel length modulation, and the channel side fringing field capacitances. As a byproduct of the development of this capacitance model, an analytic charge-sheet current model has been obtained. The current, charges, their first derivatives (conductance and capacitance), and second derivatives are continuous over all the operating regions. An automatic direct-on-wafer off-chip capacitance measurement system with 14 aF rms resolution has been developed for performing the model parameter extraction.
UR - https://www.scopus.com/pages/publications/0022956814
M3 - Conference article published in journal
AN - SCOPUS:0022956814
SN - 0163-1918
SP - 40
EP - 43
JO - Technical Digest - International Electron Devices Meeting, IEDM
JF - Technical Digest - International Electron Devices Meeting, IEDM
ER -