Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

Chenguang He; Zhixin Qin; Fujun Xu; Lisheng Zhang; Jiaming Wang; Mengjun Hou; Shan Zhang; Xinqiang Wang; Weikun Ge; Bo Shen

doi:10.1038/srep25124

Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

Chenguang He, Zhixin Qin^*, Fujun Xu, Lisheng Zhang, Jiaming Wang, Mengjun Hou, Shan Zhang, Xinqiang Wang, Weikun Ge, Bo Shen

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

29 Citations (Scopus)

Abstract

Two AlGaN samples with different strain were designed to investigate mechanism of stress-driven composition evolution. It is discovered that AlGaN grown on AlN or (AlN/GaN superlattices (SLs))/GaN both consist of two distinct regions with different compositions: transition region and uniform region, which is attributed to the compositional pulling effect. The formation of the transition region is due to the partial stress release caused by the generation of misfit dislocations near the hetero-interface. And the Al composition in the uniform region depends on the magnitude of residual strain. The difference in relaxation degree is 80.5% for the AlGaN epilayers grown on different underlayers, leading to a large Al composition difference of 22%. The evolutionary process of Al composition along [0001] direction was investigated in detail.

Original language	English
Article number	25124
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep25124
Publication status	Published - 26 Apr 2016
Externally published	Yes

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title = "Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system",

abstract = "Two AlGaN samples with different strain were designed to investigate mechanism of stress-driven composition evolution. It is discovered that AlGaN grown on AlN or (AlN/GaN superlattices (SLs))/GaN both consist of two distinct regions with different compositions: transition region and uniform region, which is attributed to the compositional pulling effect. The formation of the transition region is due to the partial stress release caused by the generation of misfit dislocations near the hetero-interface. And the Al composition in the uniform region depends on the magnitude of residual strain. The difference in relaxation degree is 80.5\% for the AlGaN epilayers grown on different underlayers, leading to a large Al composition difference of 22\%. The evolutionary process of Al composition along [0001] direction was investigated in detail.",

author = "Chenguang He and Zhixin Qin and Fujun Xu and Lisheng Zhang and Jiaming Wang and Mengjun Hou and Shan Zhang and Xinqiang Wang and Weikun Ge and Bo Shen",

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doi = "10.1038/srep25124",

language = "English",

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journal = "Scientific Reports",

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T1 - Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

AU - He, Chenguang

AU - Qin, Zhixin

AU - Xu, Fujun

AU - Zhang, Lisheng

AU - Wang, Jiaming

AU - Hou, Mengjun

AU - Zhang, Shan

AU - Wang, Xinqiang

AU - Ge, Weikun

AU - Shen, Bo

PY - 2016/4/26

Y1 - 2016/4/26

N2 - Two AlGaN samples with different strain were designed to investigate mechanism of stress-driven composition evolution. It is discovered that AlGaN grown on AlN or (AlN/GaN superlattices (SLs))/GaN both consist of two distinct regions with different compositions: transition region and uniform region, which is attributed to the compositional pulling effect. The formation of the transition region is due to the partial stress release caused by the generation of misfit dislocations near the hetero-interface. And the Al composition in the uniform region depends on the magnitude of residual strain. The difference in relaxation degree is 80.5% for the AlGaN epilayers grown on different underlayers, leading to a large Al composition difference of 22%. The evolutionary process of Al composition along [0001] direction was investigated in detail.

AB - Two AlGaN samples with different strain were designed to investigate mechanism of stress-driven composition evolution. It is discovered that AlGaN grown on AlN or (AlN/GaN superlattices (SLs))/GaN both consist of two distinct regions with different compositions: transition region and uniform region, which is attributed to the compositional pulling effect. The formation of the transition region is due to the partial stress release caused by the generation of misfit dislocations near the hetero-interface. And the Al composition in the uniform region depends on the magnitude of residual strain. The difference in relaxation degree is 80.5% for the AlGaN epilayers grown on different underlayers, leading to a large Al composition difference of 22%. The evolutionary process of Al composition along [0001] direction was investigated in detail.

UR - https://www.scopus.com/pages/publications/84964584114

U2 - 10.1038/srep25124

DO - 10.1038/srep25124

M3 - Journal Article

AN - SCOPUS:84964584114

SN - 2045-2322

VL - 6

JO - Scientific Reports

JF - Scientific Reports

M1 - 25124

ER -

Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

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