Metal induced continuous grain polycrystalline silicon thin film transistors

Hoi Sing Kwok; Man Wong; Shuyun Zhao; Zhiguo Meng

doi:10.1109/ICSICT.2008.4734705

Metal induced continuous grain polycrystalline silicon thin film transistors

Hoi Sing Kwok, Man Wong, Shuyun Zhao, Zhiguo Meng

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

2 Citations (Scopus)

Abstract

Metal induced polycrystalline silicon (poly-Si) films composing of continuous zonal domain (CZD) have been obtained through pre-defined crystalline nucleation lines. The impact of glass substrate shrinking on subsequent alignment process is determined. The crystallization process is precisely controllable and the annealing time can be shorter than one hour. P-channel thin film transistors (TFTs) built on CZD poly-Si have high performance and high uniformity. In this paper, we also demonstrate the application of CZD TFT to fast addressing active matrix field sequential color (FSC) LCD. A prototype display panel has been fabricated. This panel also has a large aperture ratio. Excellent color purity and fast moving image can be obtained.

Original language	English
Title of host publication	ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages	970-973
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2008.4734705
Publication status	Published - 2008
Event	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: 20 Oct 2008 → 23 Oct 2008

Publication series

Name	International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Conference

Conference	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Country/Territory	China
City	Beijing
Period	20/10/08 → 23/10/08

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10.1109/ICSICT.2008.4734705

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Kwok, H. S., Wong, M., Zhao, S., & Meng, Z. (2008). Metal induced continuous grain polycrystalline silicon thin film transistors. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 970-973). Article 4734705 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734705

@inproceedings{dbed2763aa7149ada003cb2d41cd92ea,

title = "Metal induced continuous grain polycrystalline silicon thin film transistors",

abstract = "Metal induced polycrystalline silicon (poly-Si) films composing of continuous zonal domain (CZD) have been obtained through pre-defined crystalline nucleation lines. The impact of glass substrate shrinking on subsequent alignment process is determined. The crystallization process is precisely controllable and the annealing time can be shorter than one hour. P-channel thin film transistors (TFTs) built on CZD poly-Si have high performance and high uniformity. In this paper, we also demonstrate the application of CZD TFT to fast addressing active matrix field sequential color (FSC) LCD. A prototype display panel has been fabricated. This panel also has a large aperture ratio. Excellent color purity and fast moving image can be obtained.",

author = "Kwok, \{Hoi Sing\} and Man Wong and Shuyun Zhao and Zhiguo Meng",

year = "2008",

doi = "10.1109/ICSICT.2008.4734705",

language = "English",

isbn = "9781424421855",

series = "International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT",

pages = "970--973",

booktitle = "ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings",

note = "2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 ; Conference date: 20-10-2008 Through 23-10-2008",

}

Kwok, HS, Wong, M, Zhao, S & Meng, Z 2008, Metal induced continuous grain polycrystalline silicon thin film transistors. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734705, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, pp. 970-973, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 20/10/08. https://doi.org/10.1109/ICSICT.2008.4734705

Metal induced continuous grain polycrystalline silicon thin film transistors. / Kwok, Hoi Sing; Wong, Man; Zhao, Shuyun et al.
ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 970-973 4734705 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Metal induced continuous grain polycrystalline silicon thin film transistors

AU - Kwok, Hoi Sing

AU - Wong, Man

AU - Zhao, Shuyun

AU - Meng, Zhiguo

PY - 2008

Y1 - 2008

N2 - Metal induced polycrystalline silicon (poly-Si) films composing of continuous zonal domain (CZD) have been obtained through pre-defined crystalline nucleation lines. The impact of glass substrate shrinking on subsequent alignment process is determined. The crystallization process is precisely controllable and the annealing time can be shorter than one hour. P-channel thin film transistors (TFTs) built on CZD poly-Si have high performance and high uniformity. In this paper, we also demonstrate the application of CZD TFT to fast addressing active matrix field sequential color (FSC) LCD. A prototype display panel has been fabricated. This panel also has a large aperture ratio. Excellent color purity and fast moving image can be obtained.

AB - Metal induced polycrystalline silicon (poly-Si) films composing of continuous zonal domain (CZD) have been obtained through pre-defined crystalline nucleation lines. The impact of glass substrate shrinking on subsequent alignment process is determined. The crystallization process is precisely controllable and the annealing time can be shorter than one hour. P-channel thin film transistors (TFTs) built on CZD poly-Si have high performance and high uniformity. In this paper, we also demonstrate the application of CZD TFT to fast addressing active matrix field sequential color (FSC) LCD. A prototype display panel has been fabricated. This panel also has a large aperture ratio. Excellent color purity and fast moving image can be obtained.

UR - https://openalex.org/W2120312721

UR - https://www.scopus.com/pages/publications/60649112499

U2 - 10.1109/ICSICT.2008.4734705

DO - 10.1109/ICSICT.2008.4734705

M3 - Conference Paper published in a book

SN - 9781424421855

T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

SP - 970

EP - 973

BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings

T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008

Y2 - 20 October 2008 through 23 October 2008

ER -

Kwok HS, Wong M, Zhao S, Meng Z. Metal induced continuous grain polycrystalline silicon thin film transistors. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 970-973. 4734705. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). doi: 10.1109/ICSICT.2008.4734705

Metal induced continuous grain polycrystalline silicon thin film transistors

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