Millimeter-wave 4:1 Transformer-based balun design for CMOS RF IC's

Liwen Jing; Alvin Li; Duona Luo; Corbett R. Rowell; C. Patrick Yue

doi:10.1109/IEEE-IWS.2015.7164519

Millimeter-wave 4:1 Transformer-based balun design for CMOS RF IC's

Liwen Jing, Alvin Li, Duona Luo, Corbett R. Rowell, C. Patrick Yue

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

This paper presents a compact 4:1 ratio transformer-based balun design in 65-nm CMOS process. The insertion loss is lower than 1.5 dB from 56 GHz to 64 GHz. The balun also serves as a matching network between the output of mixer and chip output terminal. By choosing appropriate inductance ratio and mutual coupling coefficient, the impedance transforms from (52.9+j85.8) ω to (29.1+j4.7) ω. Cascade ABCD parameter de-embedding technique is applied to remove the connection parasitic effects in the testing structure.

Original language	English
Title of host publication	2015 IEEE International Wireless Symposium, IWS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479919284
DOIs	https://doi.org/10.1109/IEEE-IWS.2015.7164519
Publication status	Published - 22 Jul 2015
Event	IEEE International Wireless Symposium, IWS 2015 - Shenzhen, China Duration: 30 Mar 2015 → 1 Apr 2015

Publication series

Name	2015 IEEE International Wireless Symposium, IWS 2015

Conference

Conference	IEEE International Wireless Symposium, IWS 2015
Country/Territory	China
City	Shenzhen
Period	30/03/15 → 1/04/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

CMOS
balun
impedance matching
millimeter wave devices

Access to Document

10.1109/IEEE-IWS.2015.7164519

Cite this

@inproceedings{8720887e255f44478695dd09f943a4cd,

title = "Millimeter-wave 4:1 Transformer-based balun design for CMOS RF IC's",

abstract = "This paper presents a compact 4:1 ratio transformer-based balun design in 65-nm CMOS process. The insertion loss is lower than 1.5 dB from 56 GHz to 64 GHz. The balun also serves as a matching network between the output of mixer and chip output terminal. By choosing appropriate inductance ratio and mutual coupling coefficient, the impedance transforms from (52.9+j85.8) ω to (29.1+j4.7) ω. Cascade ABCD parameter de-embedding technique is applied to remove the connection parasitic effects in the testing structure.",

keywords = "CMOS, balun, impedance matching, millimeter wave devices",

author = "Liwen Jing and Alvin Li and Duona Luo and Rowell, \{Corbett R.\} and Yue, \{C. Patrick\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Wireless Symposium, IWS 2015 ; Conference date: 30-03-2015 Through 01-04-2015",

year = "2015",

month = jul,

day = "22",

doi = "10.1109/IEEE-IWS.2015.7164519",

language = "English",

series = "2015 IEEE International Wireless Symposium, IWS 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE International Wireless Symposium, IWS 2015",

}

Jing, L, Li, A, Luo, D, Rowell, CR & Yue, CP 2015, Millimeter-wave 4:1 Transformer-based balun design for CMOS RF IC's. in 2015 IEEE International Wireless Symposium, IWS 2015., 7164519, 2015 IEEE International Wireless Symposium, IWS 2015, Institute of Electrical and Electronics Engineers Inc., IEEE International Wireless Symposium, IWS 2015, Shenzhen, China, 30/03/15. https://doi.org/10.1109/IEEE-IWS.2015.7164519

Millimeter-wave 4:1 Transformer-based balun design for CMOS RF IC's. / Jing, Liwen; Li, Alvin; Luo, Duona et al.
2015 IEEE International Wireless Symposium, IWS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7164519 (2015 IEEE International Wireless Symposium, IWS 2015).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Millimeter-wave 4:1 Transformer-based balun design for CMOS RF IC's

AU - Jing, Liwen

AU - Li, Alvin

AU - Luo, Duona

AU - Rowell, Corbett R.

AU - Yue, C. Patrick

PY - 2015/7/22

Y1 - 2015/7/22

N2 - This paper presents a compact 4:1 ratio transformer-based balun design in 65-nm CMOS process. The insertion loss is lower than 1.5 dB from 56 GHz to 64 GHz. The balun also serves as a matching network between the output of mixer and chip output terminal. By choosing appropriate inductance ratio and mutual coupling coefficient, the impedance transforms from (52.9+j85.8) ω to (29.1+j4.7) ω. Cascade ABCD parameter de-embedding technique is applied to remove the connection parasitic effects in the testing structure.

AB - This paper presents a compact 4:1 ratio transformer-based balun design in 65-nm CMOS process. The insertion loss is lower than 1.5 dB from 56 GHz to 64 GHz. The balun also serves as a matching network between the output of mixer and chip output terminal. By choosing appropriate inductance ratio and mutual coupling coefficient, the impedance transforms from (52.9+j85.8) ω to (29.1+j4.7) ω. Cascade ABCD parameter de-embedding technique is applied to remove the connection parasitic effects in the testing structure.

KW - CMOS

KW - balun

KW - impedance matching

KW - millimeter wave devices

UR - https://openalex.org/W1493464938

UR - https://www.scopus.com/pages/publications/84944929516

U2 - 10.1109/IEEE-IWS.2015.7164519

DO - 10.1109/IEEE-IWS.2015.7164519

M3 - Conference Paper published in a book

T3 - 2015 IEEE International Wireless Symposium, IWS 2015

BT - 2015 IEEE International Wireless Symposium, IWS 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE International Wireless Symposium, IWS 2015

Y2 - 30 March 2015 through 1 April 2015

ER -

Millimeter-wave 4:1 Transformer-based balun design for CMOS RF IC's

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