Abstract
Field emission from p-type silicon is very sensitive to external excitation by light or heat, which leads to use of p-type silicon emitter in photocathodes. When an external field is applied to the p-type silicon emitter, field penetration into p-type silicon emitter creates a depletion region and causes the field emission current to be limited by the supply of electrons in the presence of a high electric field. A model is presented that takes field-enhanced generation within the depletion region into account, which may explain the nonlinear phenomenon in Fowler-Nordheim plots of p-type silicon.
| Original language | English |
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| Pages | 291-295 |
| Number of pages | 5 |
| Publication status | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea Duration: 17 Aug 1997 → 21 Aug 1997 |
Conference
| Conference | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 |
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| City | Kyongju, Korea |
| Period | 17/08/97 → 21/08/97 |