Model study of the local vibration center related to EL2 levels in GaAs

Xuefu Zhong; Desheng Jiang; Weikun Ge; Chunying Song

doi:10.1063/1.99386

Model study of the local vibration center related to EL2 levels in GaAs

Xuefu Zhong^*, Desheng Jiang, Weikun Ge, Chunying Song

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

36 Citations (Scopus)

Abstract

A tentative explanation is given for a recently reported local vibrational mode induced infrared absorption which is related to EL2 centers in GaAs. Interstitial (or off-center substitutional) oxygen is suggested to be responsible for these vibration modes. Taking lattice relaxation into account, a simple model based on the two-center bond theory is proposed and evaluated. The adequacy of this model strongly implies a relationship of EL2 centers in the measured samples with oxygen.

Original language	English
Pages (from-to)	628-630
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	8
DOIs	https://doi.org/10.1063/1.99386
Publication status	Published - 1988
Externally published	Yes

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title = "Model study of the local vibration center related to EL2 levels in GaAs",

abstract = "A tentative explanation is given for a recently reported local vibrational mode induced infrared absorption which is related to EL2 centers in GaAs. Interstitial (or off-center substitutional) oxygen is suggested to be responsible for these vibration modes. Taking lattice relaxation into account, a simple model based on the two-center bond theory is proposed and evaluated. The adequacy of this model strongly implies a relationship of EL2 centers in the measured samples with oxygen.",

author = "Xuefu Zhong and Desheng Jiang and Weikun Ge and Chunying Song",

year = "1988",

doi = "10.1063/1.99386",

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journal = "Applied Physics Letters",

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T1 - Model study of the local vibration center related to EL2 levels in GaAs

AU - Zhong, Xuefu

AU - Jiang, Desheng

AU - Ge, Weikun

AU - Song, Chunying

PY - 1988

Y1 - 1988

N2 - A tentative explanation is given for a recently reported local vibrational mode induced infrared absorption which is related to EL2 centers in GaAs. Interstitial (or off-center substitutional) oxygen is suggested to be responsible for these vibration modes. Taking lattice relaxation into account, a simple model based on the two-center bond theory is proposed and evaluated. The adequacy of this model strongly implies a relationship of EL2 centers in the measured samples with oxygen.

AB - A tentative explanation is given for a recently reported local vibrational mode induced infrared absorption which is related to EL2 centers in GaAs. Interstitial (or off-center substitutional) oxygen is suggested to be responsible for these vibration modes. Taking lattice relaxation into account, a simple model based on the two-center bond theory is proposed and evaluated. The adequacy of this model strongly implies a relationship of EL2 centers in the measured samples with oxygen.

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U2 - 10.1063/1.99386

DO - 10.1063/1.99386

M3 - Journal Article

AN - SCOPUS:36549104475

SN - 0003-6951

VL - 52

SP - 628

EP - 630

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Model study of the local vibration center related to EL2 levels in GaAs

Abstract

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