Modeling of a MOSFET's parasitic resistance's narrow width and body bias effects for an IC simulator

K. Chen; YH Cheng; CM Hu; ZH Liu; MC Jeng; PK Ko

Modeling of a MOSFET's parasitic resistance's narrow width and body bias effects for an IC simulator

K. Chen, YH Cheng, CM Hu, ZH Liu, MC Jeng, PK Ko

The Hong Kong University of Science and Technology

Research output: Contribution to journal › Journal Article › peer-review

2 Citations (Scopus)

Abstract

Based on experimental data and physical understanding of the narrow width effect of source/drain parasitic series resistance of LDD MOSFETs, dimension and bias dependent models of R(ds) are derived and discussed. A simplified model for an IC simulator is proposed for the first time. The new R(ds) model is compared with the measurement data for wide ranges of W and V-bs for several technologies. Excellent accuracy is found with all the technologies tested. The model is implemented in BSIM3v3. Copyright (C) 1996 Elsevier Science Ltd

Original language	English
Journal	Solid-State Electronics
Publication status	Published - 1996

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title = "Modeling of a MOSFET's parasitic resistance's narrow width and body bias effects for an IC simulator",

abstract = "Based on experimental data and physical understanding of the narrow width effect of source/drain parasitic series resistance of LDD MOSFETs, dimension and bias dependent models of R(ds) are derived and discussed. A simplified model for an IC simulator is proposed for the first time. The new R(ds) model is compared with the measurement data for wide ranges of W and V-bs for several technologies. Excellent accuracy is found with all the technologies tested. The model is implemented in BSIM3v3. Copyright (C) 1996 Elsevier Science Ltd",

author = "K. Chen and YH Cheng and CM Hu and ZH Liu and MC Jeng and PK Ko",

year = "1996",

language = "English",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Modeling of a MOSFET's parasitic resistance's narrow width and body bias effects for an IC simulator

AU - Chen, K.

AU - Cheng, YH

AU - Hu, CM

AU - Liu, ZH

AU - Jeng, MC

AU - Ko, PK

PY - 1996

Y1 - 1996

N2 - Based on experimental data and physical understanding of the narrow width effect of source/drain parasitic series resistance of LDD MOSFETs, dimension and bias dependent models of R(ds) are derived and discussed. A simplified model for an IC simulator is proposed for the first time. The new R(ds) model is compared with the measurement data for wide ranges of W and V-bs for several technologies. Excellent accuracy is found with all the technologies tested. The model is implemented in BSIM3v3. Copyright (C) 1996 Elsevier Science Ltd

AB - Based on experimental data and physical understanding of the narrow width effect of source/drain parasitic series resistance of LDD MOSFETs, dimension and bias dependent models of R(ds) are derived and discussed. A simplified model for an IC simulator is proposed for the first time. The new R(ds) model is compared with the measurement data for wide ranges of W and V-bs for several technologies. Excellent accuracy is found with all the technologies tested. The model is implemented in BSIM3v3. Copyright (C) 1996 Elsevier Science Ltd

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1996VE35400025

UR - https://www.scopus.com/pages/publications/0030241017

M3 - Journal Article

SN - 0038-1101

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Modeling of a MOSFET's parasitic resistance's narrow width and body bias effects for an IC simulator

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