TY - GEN
T1 - Modeling of hole generation/trapping in ultrathin SiO2 films during gate injection of electrons in direct tunneling regime
AU - Samanta, Piyas
AU - Chan, Mansun
PY - 2009
Y1 - 2009
N2 - An experimental investigation on oxide positive charge buildup in sub 3-nm silicon dioxide (SiO2) films is presented during direct tunneling (DT) of electrons at -1.8 V of gate bias. The measurement results can be best explained by hole generation via anode hole injection (AHI) mechanism and the subsequent trapping of holes in the as-fabricated neutral hole traps in the oxide. A comparative study of hole trapping characteristics and threshold voltage shift during constant voltage and current stress are also discussed. We demonstrate that constant voltage stress (CVS) is more vulnerable than constant current stress (CCS) in deteriorating device performances. Furthermore, our measurement results indicate generation of interface states due to interaction with holes and the subsequent release of proton which in turn generates neutral electron traps as the SiOH centers.
AB - An experimental investigation on oxide positive charge buildup in sub 3-nm silicon dioxide (SiO2) films is presented during direct tunneling (DT) of electrons at -1.8 V of gate bias. The measurement results can be best explained by hole generation via anode hole injection (AHI) mechanism and the subsequent trapping of holes in the as-fabricated neutral hole traps in the oxide. A comparative study of hole trapping characteristics and threshold voltage shift during constant voltage and current stress are also discussed. We demonstrate that constant voltage stress (CVS) is more vulnerable than constant current stress (CCS) in deteriorating device performances. Furthermore, our measurement results indicate generation of interface states due to interaction with holes and the subsequent release of proton which in turn generates neutral electron traps as the SiOH centers.
KW - Anode hole injection
KW - Hole trapping
KW - Interface state
UR - https://openalex.org/W2157685447
UR - https://www.scopus.com/pages/publications/77949892827
U2 - 10.1109/EDST.2009.5166128
DO - 10.1109/EDST.2009.5166128
M3 - Conference Paper published in a book
SN - 9781424438310
T3 - 2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09
BT - 2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09
T2 - 2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09
Y2 - 1 June 2009 through 2 June 2009
ER -