Modeling short-channel effect of elliptical gate-all-around MOSFET by effective radius

Lining Zhang; Lin Li; Jin He; Mansun Chan

doi:10.1109/LED.2011.2159358

Modeling short-channel effect of elliptical gate-all-around MOSFET by effective radius

Lining Zhang^*, Lin Li, Jin He, Mansun Chan

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

43 Citations (Scopus)

Abstract

Gate-all-around (GAA) MOSFETs with elliptical cross section are studied in this letter. From the solution of the Poisson equation, an effective radius concept (R_eff) is proposed to convert elliptical GAA MOSFETs into equivalent circular GAA MOSFETs for the study of short-channel effect. The R_eff approach is used to estimate the subthreshold swing, drain-induced barrier lowering, and Q_onQ_off ratio of elliptical GAA MOSFETs. The predictions are validated by numerical 3-D TCAD simulations, and good agreement is achieved. R_eff is also simplified to an area-to-perimeter ratio of the channel under some special conditions, and its physical meaning is explained.

Original language	English
Article number	5937043
Pages (from-to)	1188-1190
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	9
DOIs	https://doi.org/10.1109/LED.2011.2159358
Publication status	Published - Sept 2011

Keywords

Effective radius
gate-all-around (GAA)
nanowire
short-channel effects (SCEs)

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10.1109/LED.2011.2159358

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title = "Modeling short-channel effect of elliptical gate-all-around MOSFET by effective radius",

abstract = "Gate-all-around (GAA) MOSFETs with elliptical cross section are studied in this letter. From the solution of the Poisson equation, an effective radius concept (Reff) is proposed to convert elliptical GAA MOSFETs into equivalent circular GAA MOSFETs for the study of short-channel effect. The Reff approach is used to estimate the subthreshold swing, drain-induced barrier lowering, and QonQoff ratio of elliptical GAA MOSFETs. The predictions are validated by numerical 3-D TCAD simulations, and good agreement is achieved. Reff is also simplified to an area-to-perimeter ratio of the channel under some special conditions, and its physical meaning is explained.",

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author = "Lining Zhang and Lin Li and Jin He and Mansun Chan",

year = "2011",

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T1 - Modeling short-channel effect of elliptical gate-all-around MOSFET by effective radius

AU - Zhang, Lining

AU - Li, Lin

AU - He, Jin

AU - Chan, Mansun

PY - 2011/9

Y1 - 2011/9

N2 - Gate-all-around (GAA) MOSFETs with elliptical cross section are studied in this letter. From the solution of the Poisson equation, an effective radius concept (Reff) is proposed to convert elliptical GAA MOSFETs into equivalent circular GAA MOSFETs for the study of short-channel effect. The Reff approach is used to estimate the subthreshold swing, drain-induced barrier lowering, and QonQoff ratio of elliptical GAA MOSFETs. The predictions are validated by numerical 3-D TCAD simulations, and good agreement is achieved. Reff is also simplified to an area-to-perimeter ratio of the channel under some special conditions, and its physical meaning is explained.

AB - Gate-all-around (GAA) MOSFETs with elliptical cross section are studied in this letter. From the solution of the Poisson equation, an effective radius concept (Reff) is proposed to convert elliptical GAA MOSFETs into equivalent circular GAA MOSFETs for the study of short-channel effect. The Reff approach is used to estimate the subthreshold swing, drain-induced barrier lowering, and QonQoff ratio of elliptical GAA MOSFETs. The predictions are validated by numerical 3-D TCAD simulations, and good agreement is achieved. Reff is also simplified to an area-to-perimeter ratio of the channel under some special conditions, and its physical meaning is explained.

KW - Effective radius

KW - gate-all-around (GAA)

KW - nanowire

KW - short-channel effects (SCEs)

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DO - 10.1109/LED.2011.2159358

M3 - Journal Article

SN - 0741-3106

VL - 32

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EP - 1190

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 5937043

ER -

Modeling short-channel effect of elliptical gate-all-around MOSFET by effective radius

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Keywords

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