Modulator on the base of ferroelectric smectite using faulty total internal reflection

A. L. Andreev; A. V. Parfenov; E. P. Pozhidaev; V. G. Chigrinov

Modulator on the base of ferroelectric smectite using faulty total internal reflection

A. L. Andreev^*, A. V. Parfenov, E. P. Pozhidaev, V. G. Chigrinov

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

Abstract

The optical radiation modulator based on the effect of total internal reflection (TIR) on the interface of a ferroelectric liquid crystal (FLC) and a glass was investigated. The new modulation scheme on the basis of the electrically controlled light TIR disturbance on the interface between FLC and a glass prism was used. The modulation depth of 0.85 was obtained for the FLC layer optical thickness of 5 μm, the control voltage of 45 v (E=2.5v/μm) and the switching time of 25 μs. The substrate configuration considered provided for the thresholdless switching. The scheme gave the opportunities to use weak electric fields (from 0.1 up to 3 v/μm), to obtain the amplitude modulation without a polaroid at an outlet and to apply electrodes on one of the substrates, which provided for the optical loss decreasing.

Original language	English
Pages (from-to)	15-19
Number of pages	5
Journal	Sbornik - Kratkie Soobshcheniya po Fizike AN SSSR
Issue number	1-2
Publication status	Published - Jan 1992

Access to Document

https://hdl.handle.net/1783.1/33462

Cite this

@article{d8109e3010bf4f7bb9383d95a57e8a64,

title = "Modulator on the base of ferroelectric smectite using faulty total internal reflection",

abstract = "The optical radiation modulator based on the effect of total internal reflection (TIR) on the interface of a ferroelectric liquid crystal (FLC) and a glass was investigated. The new modulation scheme on the basis of the electrically controlled light TIR disturbance on the interface between FLC and a glass prism was used. The modulation depth of 0.85 was obtained for the FLC layer optical thickness of 5 μm, the control voltage of 45 v (E=2.5v/μm) and the switching time of 25 μs. The substrate configuration considered provided for the thresholdless switching. The scheme gave the opportunities to use weak electric fields (from 0.1 up to 3 v/μm), to obtain the amplitude modulation without a polaroid at an outlet and to apply electrodes on one of the substrates, which provided for the optical loss decreasing.",

author = "Andreev, \{A. L.\} and Parfenov, \{A. V.\} and Pozhidaev, \{E. P.\} and Chigrinov, \{V. G.\}",

year = "1992",

month = jan,

language = "English",

pages = "15--19",

journal = "Sbornik - Kratkie Soobshcheniya po Fizike AN SSSR",

number = "1-2",

}

TY - JOUR

T1 - Modulator on the base of ferroelectric smectite using faulty total internal reflection

AU - Andreev, A. L.

AU - Parfenov, A. V.

AU - Pozhidaev, E. P.

AU - Chigrinov, V. G.

PY - 1992/1

Y1 - 1992/1

N2 - The optical radiation modulator based on the effect of total internal reflection (TIR) on the interface of a ferroelectric liquid crystal (FLC) and a glass was investigated. The new modulation scheme on the basis of the electrically controlled light TIR disturbance on the interface between FLC and a glass prism was used. The modulation depth of 0.85 was obtained for the FLC layer optical thickness of 5 μm, the control voltage of 45 v (E=2.5v/μm) and the switching time of 25 μs. The substrate configuration considered provided for the thresholdless switching. The scheme gave the opportunities to use weak electric fields (from 0.1 up to 3 v/μm), to obtain the amplitude modulation without a polaroid at an outlet and to apply electrodes on one of the substrates, which provided for the optical loss decreasing.

AB - The optical radiation modulator based on the effect of total internal reflection (TIR) on the interface of a ferroelectric liquid crystal (FLC) and a glass was investigated. The new modulation scheme on the basis of the electrically controlled light TIR disturbance on the interface between FLC and a glass prism was used. The modulation depth of 0.85 was obtained for the FLC layer optical thickness of 5 μm, the control voltage of 45 v (E=2.5v/μm) and the switching time of 25 μs. The substrate configuration considered provided for the thresholdless switching. The scheme gave the opportunities to use weak electric fields (from 0.1 up to 3 v/μm), to obtain the amplitude modulation without a polaroid at an outlet and to apply electrodes on one of the substrates, which provided for the optical loss decreasing.

UR - https://www.scopus.com/pages/publications/0026454609

M3 - Journal Article

SP - 15

EP - 19

JO - Sbornik - Kratkie Soobshcheniya po Fizike AN SSSR

JF - Sbornik - Kratkie Soobshcheniya po Fizike AN SSSR

IS - 1-2

ER -

Modulator on the base of ferroelectric smectite using faulty total internal reflection

Abstract

Access to Document

Other files and links

Fingerprint

Cite this