Monolithic integration of a 94GHz AlGaAs/GaAs 2DEG mixer on quartz substrate by epitaxial lift-off

Ricardo Basco; Ajay Prabhu; Sigfrid Yngvesson; Kei May Lau

Monolithic integration of a 94GHz AlGaAs/GaAs 2DEG mixer on quartz substrate by epitaxial lift-off

Ricardo Basco^*, Ajay Prabhu, Sigfrid Yngvesson, Kei May Lau

^*Corresponding author for this work

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

This paper reports the integration of an AlGaAs/GaAs 2-D electron gas (2DEG) bolometric mixer and a quartz-based microstrip circuit using the epitaxial lift-off technique. The predicted potential performance of the 2DEG mixer at about 1 THz is about 2,0000 K, which is competitive with the best data for Schottky diode mixers. The 2DEG mixer fabrication procedure demonstrated here is advantageous for its simplicity and uncritical choice of substrate. The active area dimensions are large (tens of μm) and uncritical, while integrated Schottky fabrication requires much more stringent consideration of size and parasitic effects.

Original language	English
Pages	38-39
Number of pages	2
Publication status	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA Duration: 19 Jun 1995 → 21 Jun 1995

Conference

Conference	Proceedings of the 1995 53rd Annual Device Research Conference Digest
City	Charlottesville, VA, USA
Period	19/06/95 → 21/06/95

Cite this

@conference{51252910439a40b382f2c2b08e704ce8,

title = "Monolithic integration of a 94GHz AlGaAs/GaAs 2DEG mixer on quartz substrate by epitaxial lift-off",

abstract = "This paper reports the integration of an AlGaAs/GaAs 2-D electron gas (2DEG) bolometric mixer and a quartz-based microstrip circuit using the epitaxial lift-off technique. The predicted potential performance of the 2DEG mixer at about 1 THz is about 2,0000 K, which is competitive with the best data for Schottky diode mixers. The 2DEG mixer fabrication procedure demonstrated here is advantageous for its simplicity and uncritical choice of substrate. The active area dimensions are large (tens of μm) and uncritical, while integrated Schottky fabrication requires much more stringent consideration of size and parasitic effects.",

author = "Ricardo Basco and Ajay Prabhu and Sigfrid Yngvesson and Lau, \{Kei May\}",

year = "1995",

language = "English",

pages = "38--39",

note = "Proceedings of the 1995 53rd Annual Device Research Conference Digest ; Conference date: 19-06-1995 Through 21-06-1995",

}

TY - CONF

T1 - Monolithic integration of a 94GHz AlGaAs/GaAs 2DEG mixer on quartz substrate by epitaxial lift-off

AU - Basco, Ricardo

AU - Prabhu, Ajay

AU - Yngvesson, Sigfrid

AU - Lau, Kei May

PY - 1995

Y1 - 1995

N2 - This paper reports the integration of an AlGaAs/GaAs 2-D electron gas (2DEG) bolometric mixer and a quartz-based microstrip circuit using the epitaxial lift-off technique. The predicted potential performance of the 2DEG mixer at about 1 THz is about 2,0000 K, which is competitive with the best data for Schottky diode mixers. The 2DEG mixer fabrication procedure demonstrated here is advantageous for its simplicity and uncritical choice of substrate. The active area dimensions are large (tens of μm) and uncritical, while integrated Schottky fabrication requires much more stringent consideration of size and parasitic effects.

AB - This paper reports the integration of an AlGaAs/GaAs 2-D electron gas (2DEG) bolometric mixer and a quartz-based microstrip circuit using the epitaxial lift-off technique. The predicted potential performance of the 2DEG mixer at about 1 THz is about 2,0000 K, which is competitive with the best data for Schottky diode mixers. The 2DEG mixer fabrication procedure demonstrated here is advantageous for its simplicity and uncritical choice of substrate. The active area dimensions are large (tens of μm) and uncritical, while integrated Schottky fabrication requires much more stringent consideration of size and parasitic effects.

UR - https://www.scopus.com/pages/publications/0029542972

M3 - Conference Paper

AN - SCOPUS:0029542972

SP - 38

EP - 39

T2 - Proceedings of the 1995 53rd Annual Device Research Conference Digest

Y2 - 19 June 1995 through 21 June 1995

ER -

Monolithic integration of a 94GHz AlGaAs/GaAs 2DEG mixer on quartz substrate by epitaxial lift-off

Abstract

Conference

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