Mosfet carrier mobility model based on gate oxide thickness, threshold and gate voltages

Kai Chen; H. Clement Wann; Jon Dunster; Ping K. Ko; Chenming Hu; Makoto Yoshida

doi:10.1016/0038-1101(96)00059-7

Mosfet carrier mobility model based on gate oxide thickness, threshold and gate voltages

Kai Chen^*, H. Clement Wann, Jon Dunster, Ping K. Ko, Chenming Hu, Makoto Yoshida

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

101 Citations (Scopus)

Abstract

The widely accepted universal dependence of N- and P-MOSFETs carrier mobility on effective vertical field E_eff = (ηQ_inv + Q_b)/∈_Si has been re-examined. New empirical mobility models for both electrons and holes expressed in terms of T_ox, V_t and V_g explicitly are formulated. New empirical mobility models are confirmed with experimental data taken from devices of different technologies. It is also shown that the hole mobility of both the surface and buried channel P-MOSFETs can be unified for the first time by a single universal mobility equation, rather than two separate equations as previously thought necessary.

Original language	English
Pages (from-to)	1515-1518
Number of pages	4
Journal	Solid-State Electronics
Volume	39
Issue number	10
DOIs	https://doi.org/10.1016/0038-1101(96)00059-7
Publication status	Published - Oct 1996
Externally published	Yes

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@article{51c3c88b229e4afe882da5c89ee8d8f0,

title = "Mosfet carrier mobility model based on gate oxide thickness, threshold and gate voltages",

abstract = "The widely accepted universal dependence of N- and P-MOSFETs carrier mobility on effective vertical field Eeff = (ηQinv + Qb)/∈Si has been re-examined. New empirical mobility models for both electrons and holes expressed in terms of Tox, Vt and Vg explicitly are formulated. New empirical mobility models are confirmed with experimental data taken from devices of different technologies. It is also shown that the hole mobility of both the surface and buried channel P-MOSFETs can be unified for the first time by a single universal mobility equation, rather than two separate equations as previously thought necessary.",

author = "Kai Chen and \{Clement Wann\}, H. and Jon Dunster and Ko, \{Ping K.\} and Chenming Hu and Makoto Yoshida",

year = "1996",

month = oct,

doi = "10.1016/0038-1101(96)00059-7",

language = "English",

volume = "39",

pages = "1515--1518",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "10",

}

TY - JOUR

T1 - Mosfet carrier mobility model based on gate oxide thickness, threshold and gate voltages

AU - Chen, Kai

AU - Clement Wann, H.

AU - Dunster, Jon

AU - Ko, Ping K.

AU - Hu, Chenming

AU - Yoshida, Makoto

PY - 1996/10

Y1 - 1996/10

N2 - The widely accepted universal dependence of N- and P-MOSFETs carrier mobility on effective vertical field Eeff = (ηQinv + Qb)/∈Si has been re-examined. New empirical mobility models for both electrons and holes expressed in terms of Tox, Vt and Vg explicitly are formulated. New empirical mobility models are confirmed with experimental data taken from devices of different technologies. It is also shown that the hole mobility of both the surface and buried channel P-MOSFETs can be unified for the first time by a single universal mobility equation, rather than two separate equations as previously thought necessary.

AB - The widely accepted universal dependence of N- and P-MOSFETs carrier mobility on effective vertical field Eeff = (ηQinv + Qb)/∈Si has been re-examined. New empirical mobility models for both electrons and holes expressed in terms of Tox, Vt and Vg explicitly are formulated. New empirical mobility models are confirmed with experimental data taken from devices of different technologies. It is also shown that the hole mobility of both the surface and buried channel P-MOSFETs can be unified for the first time by a single universal mobility equation, rather than two separate equations as previously thought necessary.

UR - https://www.scopus.com/pages/publications/0030269375

U2 - 10.1016/0038-1101(96)00059-7

DO - 10.1016/0038-1101(96)00059-7

M3 - Journal Article

AN - SCOPUS:0030269375

SN - 0038-1101

VL - 39

SP - 1515

EP - 1518

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10

ER -

Mosfet carrier mobility model based on gate oxide thickness, threshold and gate voltages

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