N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy

Man Hoi Wong; Yi Pei; David Brown; James S. Speck; Umesh K. Mishra; Michael L. Schuette; Hyeongnam Kim; Venkatesh Balasubramanian; Wu Lu

N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy

Man Hoi Wong^*, Yi Pei, David Brown, James S. Speck, Umesh K. Mishra, Michael L. Schuette, Hyeongnam Kim, Venkatesh Balasubramanian, Wu Lu

^*Corresponding author for this work

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

This work investigates the use of N-face GaN-based heterostructures as a promising approach to overcome performance limitations commonly encountered in Gaface AlGaN/GaN HEMTs as their frequency of operation extends into the millimeter-wave and beyond. N-face (0001̄)?GaN, with its reversed direction of polarization compared to that of the Ga-face (0001), are well-suited for designing new device structures that address the problems of poor electron confinement and high ohmic contact resistance in highly-scaled GaN transistors. The fabrication and characterization of two N-face MISHEMT structures by plasma-assisted MBE are presented. The devices demonstrated good RF performance at 4 GHz, with the highest continuous-wave output power density and power-added efficiency exceeding 8 W/mm and 70%, respectively. At 10 GHz, an output power density and power-added efficiency of 4.2 W/mm and 49%, respectively, were achieved.

Original language	English
Title of host publication	2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010
Publication status	Published - 2010
Externally published	Yes
Event	2010 International Conference on Compound Semiconductor Manufacturing Technology - Portland, OR, United States Duration: 17 May 2010 → 20 May 2010

Publication series

Name	2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010

Conference

Conference	2010 International Conference on Compound Semiconductor Manufacturing Technology
Country/Territory	United States
City	Portland, OR
Period	17/05/10 → 20/05/10

Keywords

AlN
Gan
High electron mobility transistor (HEMT)
Microwave power
Molecular beam epitaxy (MBE)
N-face

Cite this

Wong, M. H., Pei, Y., Brown, D., Speck, J. S., Mishra, U. K., Schuette, M. L., Kim, H., Balasubramanian, V., & Lu, W. (2010). N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy. In 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010 (2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010).

Wong, Man Hoi ; Pei, Yi ; Brown, David et al. / N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy. 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010. 2010. (2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010).

@inproceedings{f81c556686b24bb4a5af380008da9b48,

title = "N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy",

abstract = "This work investigates the use of N-face GaN-based heterostructures as a promising approach to overcome performance limitations commonly encountered in Gaface AlGaN/GaN HEMTs as their frequency of operation extends into the millimeter-wave and beyond. N-face (000{\=1})?GaN, with its reversed direction of polarization compared to that of the Ga-face (0001), are well-suited for designing new device structures that address the problems of poor electron confinement and high ohmic contact resistance in highly-scaled GaN transistors. The fabrication and characterization of two N-face MISHEMT structures by plasma-assisted MBE are presented. The devices demonstrated good RF performance at 4 GHz, with the highest continuous-wave output power density and power-added efficiency exceeding 8 W/mm and 70\%, respectively. At 10 GHz, an output power density and power-added efficiency of 4.2 W/mm and 49\%, respectively, were achieved.",

keywords = "AlN, Gan, High electron mobility transistor (HEMT), Microwave power, Molecular beam epitaxy (MBE), N-face",

author = "Wong, \{Man Hoi\} and Yi Pei and David Brown and Speck, \{James S.\} and Mishra, \{Umesh K.\} and Schuette, \{Michael L.\} and Hyeongnam Kim and Venkatesh Balasubramanian and Wu Lu",

year = "2010",

language = "English",

isbn = "1893580156",

series = "2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010",

booktitle = "2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010",

note = "2010 International Conference on Compound Semiconductor Manufacturing Technology ; Conference date: 17-05-2010 Through 20-05-2010",

}

Wong, MH, Pei, Y, Brown, D, Speck, JS, Mishra, UK, Schuette, ML, Kim, H, Balasubramanian, V & Lu, W 2010, N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy. in 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010. 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010, 2010 International Conference on Compound Semiconductor Manufacturing Technology, Portland, OR, United States, 17/05/10.

N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy. / Wong, Man Hoi; Pei, Yi; Brown, David et al.
2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010. 2010. (2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy

AU - Wong, Man Hoi

AU - Pei, Yi

AU - Brown, David

AU - Speck, James S.

AU - Mishra, Umesh K.

AU - Schuette, Michael L.

AU - Kim, Hyeongnam

AU - Balasubramanian, Venkatesh

AU - Lu, Wu

PY - 2010

Y1 - 2010

N2 - This work investigates the use of N-face GaN-based heterostructures as a promising approach to overcome performance limitations commonly encountered in Gaface AlGaN/GaN HEMTs as their frequency of operation extends into the millimeter-wave and beyond. N-face (0001̄)?GaN, with its reversed direction of polarization compared to that of the Ga-face (0001), are well-suited for designing new device structures that address the problems of poor electron confinement and high ohmic contact resistance in highly-scaled GaN transistors. The fabrication and characterization of two N-face MISHEMT structures by plasma-assisted MBE are presented. The devices demonstrated good RF performance at 4 GHz, with the highest continuous-wave output power density and power-added efficiency exceeding 8 W/mm and 70%, respectively. At 10 GHz, an output power density and power-added efficiency of 4.2 W/mm and 49%, respectively, were achieved.

AB - This work investigates the use of N-face GaN-based heterostructures as a promising approach to overcome performance limitations commonly encountered in Gaface AlGaN/GaN HEMTs as their frequency of operation extends into the millimeter-wave and beyond. N-face (0001̄)?GaN, with its reversed direction of polarization compared to that of the Ga-face (0001), are well-suited for designing new device structures that address the problems of poor electron confinement and high ohmic contact resistance in highly-scaled GaN transistors. The fabrication and characterization of two N-face MISHEMT structures by plasma-assisted MBE are presented. The devices demonstrated good RF performance at 4 GHz, with the highest continuous-wave output power density and power-added efficiency exceeding 8 W/mm and 70%, respectively. At 10 GHz, an output power density and power-added efficiency of 4.2 W/mm and 49%, respectively, were achieved.

KW - AlN

KW - Gan

KW - High electron mobility transistor (HEMT)

KW - Microwave power

KW - Molecular beam epitaxy (MBE)

KW - N-face

UR - https://www.scopus.com/pages/publications/84887346130

M3 - Conference Paper published in a book

AN - SCOPUS:84887346130

SN - 1893580156

SN - 9781893580152

T3 - 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010

BT - 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010

T2 - 2010 International Conference on Compound Semiconductor Manufacturing Technology

Y2 - 17 May 2010 through 20 May 2010

ER -

Wong MH, Pei Y, Brown D, Speck JS, Mishra UK, Schuette ML et al. N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy. In 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010. 2010. (2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010).

N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy

Abstract

Publication series

Conference

Keywords

Other files and links

Fingerprint

Cite this