Nanoscale Semiconductor Memories Technology and Applications: Chapter 10. Phase-Change Memory Cell Model and Simulation

Research output: Chapter in Book/Conference Proceeding/Report › Book Chapter › peer-review

Original language	English
Title of host publication	Nanoscale Semiconductor Memories: Technology and Applications
Publisher	CRC Press - Taylor & Francis Group, LLC
Pages	259-306
ISBN (Print)	9781466560604, 9781466560611
Publication status	Published - Feb 2013

Access to Document

@inbook{9056e01bb50e44e096987f037bf0d2d5,

title = "Nanoscale Semiconductor Memories Technology and Applications: Chapter 10. Phase-Change Memory Cell Model and Simulation",

author = "Jin He and Yujun Wei and Chan, \{Man Sun\}",

year = "2013",

month = feb,

language = "English",

isbn = "9781466560604",

pages = "259--306",

booktitle = "Nanoscale Semiconductor Memories: Technology and Applications",

publisher = "CRC Press - Taylor \& Francis Group, LLC",

}

Nanoscale Semiconductor Memories Technology and Applications: Chapter 10. Phase-Change Memory Cell Model and Simulation. / He, Jin; Wei, Yujun; Chan, Man Sun.
Nanoscale Semiconductor Memories: Technology and Applications. CRC Press - Taylor & Francis Group, LLC, 2013. p. 259-306.

Research output: Chapter in Book/Conference Proceeding/Report › Book Chapter › peer-review

TY - CHAP

T1 - Nanoscale Semiconductor Memories Technology and Applications: Chapter 10. Phase-Change Memory Cell Model and Simulation

AU - He, Jin

AU - Wei, Yujun

AU - Chan, Man Sun

PY - 2013/2

Y1 - 2013/2

M3 - Book Chapter

SN - 9781466560604

SN - 9781466560611

SP - 259

EP - 306

BT - Nanoscale Semiconductor Memories: Technology and Applications

PB - CRC Press - Taylor & Francis Group, LLC

ER -