Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications

R. P. Shi; X. D. Huang; Johnny K.O. Sin; P. T. Lai

doi:10.1016/j.microrel.2016.07.148

Nb-doped Ga₂O₃ as charge-trapping layer for nonvolatile memory applications

R. P. Shi
, X. D. Huang
, Johnny K.O. Sin
, P. T. Lai^*

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

8 Citations (Scopus)

Abstract

The charge-trapping properties of Nb-doped Ga₂O₃ are investigated by using an Al/Al₂O₃/GaNbO/SiO₂/Si structure. Compared with the memory capacitor with pure Ga₂O₃, the one with lightly Nb-doped Ga₂O₃ shows better charge-trapping characteristics, including larger memory window (5.5 V at ± 6 V sweeping voltage), higher programming and erasing speeds due to its higher trapping efficiency resulted from increased trap density induced by the Nb doping. The sample with heavily Nb-doped Ga₂O₃ also shows improvements compared with the one with pure Ga₂O₃, but not as large as those for the lightly Nb-doped sample due to defects generated by excessive Nb doping. Erase saturation phenomenon is observed in all the samples, and can be suppressed by hole traps created by the Nb doping.

Original language	English
Pages (from-to)	64-68
Number of pages	5
Journal	Microelectronics Reliability
Volume	65
DOIs	https://doi.org/10.1016/j.microrel.2016.07.148
Publication status	Published - 1 Oct 2016

Bibliographical note

Publisher Copyright:
© 2016

Keywords

Charge trapping
High-k dielectric
Nb-doped GaO
Nonvolatile memory

Access to Document

10.1016/j.microrel.2016.07.148

Cite this

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title = "Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications",

abstract = "The charge-trapping properties of Nb-doped Ga2O3 are investigated by using an Al/Al2O3/GaNbO/SiO2/Si structure. Compared with the memory capacitor with pure Ga2O3, the one with lightly Nb-doped Ga2O3 shows better charge-trapping characteristics, including larger memory window (5.5 V at ± 6 V sweeping voltage), higher programming and erasing speeds due to its higher trapping efficiency resulted from increased trap density induced by the Nb doping. The sample with heavily Nb-doped Ga2O3 also shows improvements compared with the one with pure Ga2O3, but not as large as those for the lightly Nb-doped sample due to defects generated by excessive Nb doping. Erase saturation phenomenon is observed in all the samples, and can be suppressed by hole traps created by the Nb doping.",

keywords = "Charge trapping, High-k dielectric, Nb-doped GaO, Nonvolatile memory",

author = "Shi, \{R. P.\} and Huang, \{X. D.\} and Sin, \{Johnny K.O.\} and Lai, \{P. T.\}",

note = "Publisher Copyright: {\textcopyright} 2016",

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doi = "10.1016/j.microrel.2016.07.148",

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T1 - Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications

AU - Shi, R. P.

AU - Huang, X. D.

AU - Sin, Johnny K.O.

AU - Lai, P. T.

PY - 2016/10/1

Y1 - 2016/10/1

N2 - The charge-trapping properties of Nb-doped Ga2O3 are investigated by using an Al/Al2O3/GaNbO/SiO2/Si structure. Compared with the memory capacitor with pure Ga2O3, the one with lightly Nb-doped Ga2O3 shows better charge-trapping characteristics, including larger memory window (5.5 V at ± 6 V sweeping voltage), higher programming and erasing speeds due to its higher trapping efficiency resulted from increased trap density induced by the Nb doping. The sample with heavily Nb-doped Ga2O3 also shows improvements compared with the one with pure Ga2O3, but not as large as those for the lightly Nb-doped sample due to defects generated by excessive Nb doping. Erase saturation phenomenon is observed in all the samples, and can be suppressed by hole traps created by the Nb doping.

AB - The charge-trapping properties of Nb-doped Ga2O3 are investigated by using an Al/Al2O3/GaNbO/SiO2/Si structure. Compared with the memory capacitor with pure Ga2O3, the one with lightly Nb-doped Ga2O3 shows better charge-trapping characteristics, including larger memory window (5.5 V at ± 6 V sweeping voltage), higher programming and erasing speeds due to its higher trapping efficiency resulted from increased trap density induced by the Nb doping. The sample with heavily Nb-doped Ga2O3 also shows improvements compared with the one with pure Ga2O3, but not as large as those for the lightly Nb-doped sample due to defects generated by excessive Nb doping. Erase saturation phenomenon is observed in all the samples, and can be suppressed by hole traps created by the Nb doping.

KW - Charge trapping

KW - High-k dielectric

KW - Nb-doped GaO

KW - Nonvolatile memory

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