Nb-doped La2O3 as charge-trapping layer for nonvolatile memory applications

Runpu Shi; X. D. Huang; C. H. Leung; Johnny K.O. Sin; P. T. Lai

doi:10.1109/TDMR.2014.2376514

Nb-doped La₂O₃ as charge-trapping layer for nonvolatile memory applications

Runpu Shi, X. D. Huang, C. H. Leung, Johnny K.O. Sin, P. T. Lai

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

6 Citations (Scopus)

Abstract

Charge-trapping properties of Nb-doped La₂O₃ (LaNbO) are investigated using an Al/Al2O₃/LaNbO/SiO2/Si structure. Compared with the memory device with La₂O₃, the one with LaNbO shows better charge-trapping characteristics, including larger memory window (6.0 V at ±16 V sweeping voltage), higher programming speed (9.1 V at +16 V for 1 ms), and better retention property (94% charge retained after 104 s at 120 .C), due to its higher trapping efficiency resulted from increased trap density and suppressed formation of a silicate interlayer at the LaNbO/SiO₂ interface by the Nb doping. Therefore, LaNbO is a promising candidate as the charge-trapping layer for nonvolatile memory applications.

Original language	English
Article number	6971123
Pages (from-to)	123-126
Number of pages	4
Journal	IEEE Transactions on Device and Materials Reliability
Volume	15
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2014.2376514
Publication status	Published - 1 Mar 2015

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

Nb-doped LaO (LaNbO)
Nonvolatile memory
charge-trapping
high-k dielectric.

Access to Document

10.1109/TDMR.2014.2376514

Cite this

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title = "Nb-doped La2O3 as charge-trapping layer for nonvolatile memory applications",

abstract = "Charge-trapping properties of Nb-doped La2O3 (LaNbO) are investigated using an Al/Al2O3/LaNbO/SiO2/Si structure. Compared with the memory device with La2O3, the one with LaNbO shows better charge-trapping characteristics, including larger memory window (6.0 V at ±16 V sweeping voltage), higher programming speed (9.1 V at +16 V for 1 ms), and better retention property (94\% charge retained after 104 s at 120 .C), due to its higher trapping efficiency resulted from increased trap density and suppressed formation of a silicate interlayer at the LaNbO/SiO2 interface by the Nb doping. Therefore, LaNbO is a promising candidate as the charge-trapping layer for nonvolatile memory applications.",

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author = "Runpu Shi and Huang, \{X. D.\} and Leung, \{C. H.\} and Sin, \{Johnny K.O.\} and Lai, \{P. T.\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

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T1 - Nb-doped La2O3 as charge-trapping layer for nonvolatile memory applications

AU - Shi, Runpu

AU - Huang, X. D.

AU - Leung, C. H.

AU - Sin, Johnny K.O.

AU - Lai, P. T.

PY - 2015/3/1

Y1 - 2015/3/1

N2 - Charge-trapping properties of Nb-doped La2O3 (LaNbO) are investigated using an Al/Al2O3/LaNbO/SiO2/Si structure. Compared with the memory device with La2O3, the one with LaNbO shows better charge-trapping characteristics, including larger memory window (6.0 V at ±16 V sweeping voltage), higher programming speed (9.1 V at +16 V for 1 ms), and better retention property (94% charge retained after 104 s at 120 .C), due to its higher trapping efficiency resulted from increased trap density and suppressed formation of a silicate interlayer at the LaNbO/SiO2 interface by the Nb doping. Therefore, LaNbO is a promising candidate as the charge-trapping layer for nonvolatile memory applications.

AB - Charge-trapping properties of Nb-doped La2O3 (LaNbO) are investigated using an Al/Al2O3/LaNbO/SiO2/Si structure. Compared with the memory device with La2O3, the one with LaNbO shows better charge-trapping characteristics, including larger memory window (6.0 V at ±16 V sweeping voltage), higher programming speed (9.1 V at +16 V for 1 ms), and better retention property (94% charge retained after 104 s at 120 .C), due to its higher trapping efficiency resulted from increased trap density and suppressed formation of a silicate interlayer at the LaNbO/SiO2 interface by the Nb doping. Therefore, LaNbO is a promising candidate as the charge-trapping layer for nonvolatile memory applications.

KW - Nb-doped LaO (LaNbO)

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KW - charge-trapping

KW - high-k dielectric.

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