Nb-doped La2O3 as charge-trapping layer for nonvolatile memory applications
- Runpu Shi
- , X. D. Huang
- , C. H. Leung
- , Johnny K.O. Sin
- , P. T. Lai
Research output: Contribution to journal › Journal Article › peer-review
6
Link opens in a new tab
Citations
(Scopus)