Nitrided La 2O 3 as charge-trapping layer for nonvolatile memory applications

X. D. Huang; Johnny K.O. Sin; P. T. Lai

doi:10.1109/TDMR.2011.2182197

Nitrided La ₂O ₃ as charge-trapping layer for nonvolatile memory applications

X. D. Huang^*
, Johnny K.O. Sin
, P. T. Lai

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

18 Citations (Scopus)

Abstract

Charge-trapping characteristics of La ₂O ₃ with and without nitrogen incorporation were investigated based on Al/Al ₂O ₃/La ₂O ₃/SiO ₂Si (MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with La ₂O ₃ as charge-trapping layer, the one with nitrided La ₂O ₃ showed a larger memory window (4.9 V at ±10-V sweeping voltage), higher program speed (4.9 V at 1-ms +14 V), and smaller charge loss (27% after 10 years), due to the nitrided La ₂O ₃ film exhibiting less crystallized structure and high trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation.

Original language	English
Article number	6125241
Pages (from-to)	306-310
Number of pages	5
Journal	IEEE Transactions on Device and Materials Reliability
Volume	12
Issue number	2
DOIs	https://doi.org/10.1109/TDMR.2011.2182197
Publication status	Published - 2012

Keywords

Charge-trapping layer (CTL)
high-k dielectric
metal-oxide-nitride-oxide- silicon (MONOS)
nitrided La O
nonvolatile memory

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10.1109/TDMR.2011.2182197

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title = "Nitrided La 2O 3 as charge-trapping layer for nonvolatile memory applications",

abstract = "Charge-trapping characteristics of La 2O 3 with and without nitrogen incorporation were investigated based on Al/Al 2O 3/La 2O 3/SiO 2Si (MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with La 2O 3 as charge-trapping layer, the one with nitrided La 2O 3 showed a larger memory window (4.9 V at ±10-V sweeping voltage), higher program speed (4.9 V at 1-ms +14 V), and smaller charge loss (27\% after 10 years), due to the nitrided La 2O 3 film exhibiting less crystallized structure and high trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation.",

keywords = "Charge-trapping layer (CTL), high-k dielectric, metal-oxide-nitride-oxide- silicon (MONOS), nitrided La O, nonvolatile memory",

author = "Huang, \{X. D.\} and Sin, \{Johnny K.O.\} and Lai, \{P. T.\}",

year = "2012",

doi = "10.1109/TDMR.2011.2182197",

language = "English",

volume = "12",

pages = "306--310",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Nitrided La 2O 3 as charge-trapping layer for nonvolatile memory applications

AU - Huang, X. D.

AU - Sin, Johnny K.O.

AU - Lai, P. T.

PY - 2012

Y1 - 2012

N2 - Charge-trapping characteristics of La 2O 3 with and without nitrogen incorporation were investigated based on Al/Al 2O 3/La 2O 3/SiO 2Si (MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with La 2O 3 as charge-trapping layer, the one with nitrided La 2O 3 showed a larger memory window (4.9 V at ±10-V sweeping voltage), higher program speed (4.9 V at 1-ms +14 V), and smaller charge loss (27% after 10 years), due to the nitrided La 2O 3 film exhibiting less crystallized structure and high trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation.

AB - Charge-trapping characteristics of La 2O 3 with and without nitrogen incorporation were investigated based on Al/Al 2O 3/La 2O 3/SiO 2Si (MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with La 2O 3 as charge-trapping layer, the one with nitrided La 2O 3 showed a larger memory window (4.9 V at ±10-V sweeping voltage), higher program speed (4.9 V at 1-ms +14 V), and smaller charge loss (27% after 10 years), due to the nitrided La 2O 3 film exhibiting less crystallized structure and high trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation.

KW - Charge-trapping layer (CTL)

KW - high-k dielectric

KW - metal-oxide-nitride-oxide- silicon (MONOS)

KW - nitrided La O

KW - nonvolatile memory

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UR - https://openalex.org/W1972280907

U2 - 10.1109/TDMR.2011.2182197

DO - 10.1109/TDMR.2011.2182197

M3 - Journal Article

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JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

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M1 - 6125241

ER -

Nitrided La ₂O ₃ as charge-trapping layer for nonvolatile memory applications

Abstract

Keywords

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