Nitrided La 2O 3 as charge-trapping layer for nonvolatile memory applications

X. D. Huang*, Johnny K.O. Sin, P. T. Lai

*Corresponding author for this work

Research output: Contribution to journalJournal Articlepeer-review

18 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Nitrided La 2O 3 as charge-trapping layer for nonvolatile memory applications'. Together they form a unique fingerprint.

Material Science

Agricultural and Biological Sciences