Noise overshoot at drain current kink in SOI MOSFET

Jian Chen; Peng Fang; Ping Keung Ko; Chenming Hu; Ray Solomon; Tung Yi Chan; Charles G. Sodini

doi:10.1109/SOSSOI.1990.145699

Noise overshoot at drain current kink in SOI MOSFET

Jian Chen, Peng Fang, Ping Keung Ko, Chenming Hu, Ray Solomon, Tung Yi Chan, Charles G. Sodini

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

31 Citations (Scopus)

Abstract

Bias dependence of the drain current noise power of SOI MOSFET's were studied and low frequency noise overshoot at the drain current kink is observed for the first time in SOI MOSFET. The overshoot has a width of about 0.7 V and exhibits a peak noise power which is two orders of magnitude higher than the normal noise level. This newly found noise phenomena will affect the usefulness of SOI device in precision analogy circuits. It also provides a new way for studying traps related SOI film and device phenomena.

Original language	English
Title of host publication	1990 IEEE SOS/SOI Technology Conference, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	40-41
Number of pages	2
ISBN (Electronic)	0879425733, 9780879425739
DOIs	https://doi.org/10.1109/SOSSOI.1990.145699
Publication status	Published - 1990
Externally published	Yes
Event	1990 IEEE SOS/SOI Technology Conference - Key West, United States Duration: 2 Oct 1990 → 4 Oct 1990

Publication series

Name	1990 IEEE SOS/SOI Technology Conference, Proceedings

Conference

Conference	1990 IEEE SOS/SOI Technology Conference
Country/Territory	United States
City	Key West
Period	2/10/90 → 4/10/90

Bibliographical note

Publisher Copyright:
© 1990 IEEE.

Access to Document

10.1109/SOSSOI.1990.145699

Cite this

Chen, J., Fang, P., Ko, P. K., Hu, C., Solomon, R., Chan, T. Y., & Sodini, C. G. (1990). Noise overshoot at drain current kink in SOI MOSFET. In 1990 IEEE SOS/SOI Technology Conference, Proceedings (pp. 40-41). Article 145699 (1990 IEEE SOS/SOI Technology Conference, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOSSOI.1990.145699

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title = "Noise overshoot at drain current kink in SOI MOSFET",

abstract = "Bias dependence of the drain current noise power of SOI MOSFET's were studied and low frequency noise overshoot at the drain current kink is observed for the first time in SOI MOSFET. The overshoot has a width of about 0.7 V and exhibits a peak noise power which is two orders of magnitude higher than the normal noise level. This newly found noise phenomena will affect the usefulness of SOI device in precision analogy circuits. It also provides a new way for studying traps related SOI film and device phenomena.",

author = "Jian Chen and Peng Fang and Ko, \{Ping Keung\} and Chenming Hu and Ray Solomon and Chan, \{Tung Yi\} and Sodini, \{Charles G.\}",

note = "Publisher Copyright: {\textcopyright} 1990 IEEE.; 1990 IEEE SOS/SOI Technology Conference ; Conference date: 02-10-1990 Through 04-10-1990",

year = "1990",

doi = "10.1109/SOSSOI.1990.145699",

language = "English",

series = "1990 IEEE SOS/SOI Technology Conference, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "40--41",

booktitle = "1990 IEEE SOS/SOI Technology Conference, Proceedings",

}

Chen, J, Fang, P, Ko, PK, Hu, C, Solomon, R, Chan, TY & Sodini, CG 1990, Noise overshoot at drain current kink in SOI MOSFET. in 1990 IEEE SOS/SOI Technology Conference, Proceedings., 145699, 1990 IEEE SOS/SOI Technology Conference, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 40-41, 1990 IEEE SOS/SOI Technology Conference, Key West, United States, 2/10/90. https://doi.org/10.1109/SOSSOI.1990.145699

Noise overshoot at drain current kink in SOI MOSFET. / Chen, Jian; Fang, Peng; Ko, Ping Keung et al.
1990 IEEE SOS/SOI Technology Conference, Proceedings. Institute of Electrical and Electronics Engineers Inc., 1990. p. 40-41 145699 (1990 IEEE SOS/SOI Technology Conference, Proceedings).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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AU - Sodini, Charles G.

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AB - Bias dependence of the drain current noise power of SOI MOSFET's were studied and low frequency noise overshoot at the drain current kink is observed for the first time in SOI MOSFET. The overshoot has a width of about 0.7 V and exhibits a peak noise power which is two orders of magnitude higher than the normal noise level. This newly found noise phenomena will affect the usefulness of SOI device in precision analogy circuits. It also provides a new way for studying traps related SOI film and device phenomena.

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Y2 - 2 October 1990 through 4 October 1990

ER -

Noise overshoot at drain current kink in SOI MOSFET

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