Abstract
We report novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). The RTHEMT incorporates a resonant-tunneling diode structure into the source region of a HEMT. A near-flat valley current is obtained in the current-voltage characteristics. This unique feature leads to the observation of negative transconductance throughout a wide range of source-drain bias. Using a simple circuit that combines an RTHEMT with a resistor load, we demonstrate frequency multipliers (both doubler and tripler) and a three-valued logic inverse literal gate.
| Original language | English |
|---|---|
| Pages (from-to) | 379-382 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting, IEDM |
| Publication status | Published - 1995 |
| Externally published | Yes |
| Event | Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: 10 Dec 1995 → 13 Dec 1995 |