Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications

Kevin J. Chen; Koichi Maezawa; Masafumi Yamamoto

Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications

Kevin J. Chen^*
, Koichi Maezawa
, Masafumi Yamamoto

^*Corresponding author for this work

Research output: Contribution to journal › Conference article published in journal › peer-review

8 Citations (Scopus)

Abstract

We report novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). The RTHEMT incorporates a resonant-tunneling diode structure into the source region of a HEMT. A near-flat valley current is obtained in the current-voltage characteristics. This unique feature leads to the observation of negative transconductance throughout a wide range of source-drain bias. Using a simple circuit that combines an RTHEMT with a resistor load, we demonstrate frequency multipliers (both doubler and tripler) and a three-valued logic inverse literal gate.

Original language	English
Pages (from-to)	379-382
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: 10 Dec 1995 → 13 Dec 1995

Cite this

@article{805f674bf20f491ea8fb9483d85e9b71,

title = "Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications",

abstract = "We report novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). The RTHEMT incorporates a resonant-tunneling diode structure into the source region of a HEMT. A near-flat valley current is obtained in the current-voltage characteristics. This unique feature leads to the observation of negative transconductance throughout a wide range of source-drain bias. Using a simple circuit that combines an RTHEMT with a resistor load, we demonstrate frequency multipliers (both doubler and tripler) and a three-valued logic inverse literal gate.",

author = "Chen, \{Kevin J.\} and Koichi Maezawa and Masafumi Yamamoto",

year = "1995",

language = "English",

pages = "379--382",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 ; Conference date: 10-12-1995 Through 13-12-1995",

}

Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications. / Chen, Kevin J.; Maezawa, Koichi; Yamamoto, Masafumi.
In: Technical Digest - International Electron Devices Meeting, IEDM, 1995, p. 379-382.

Research output: Contribution to journal › Conference article published in journal › peer-review

TY - JOUR

T1 - Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications

AU - Chen, Kevin J.

AU - Maezawa, Koichi

AU - Yamamoto, Masafumi

PY - 1995

Y1 - 1995

N2 - We report novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). The RTHEMT incorporates a resonant-tunneling diode structure into the source region of a HEMT. A near-flat valley current is obtained in the current-voltage characteristics. This unique feature leads to the observation of negative transconductance throughout a wide range of source-drain bias. Using a simple circuit that combines an RTHEMT with a resistor load, we demonstrate frequency multipliers (both doubler and tripler) and a three-valued logic inverse literal gate.

AB - We report novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). The RTHEMT incorporates a resonant-tunneling diode structure into the source region of a HEMT. A near-flat valley current is obtained in the current-voltage characteristics. This unique feature leads to the observation of negative transconductance throughout a wide range of source-drain bias. Using a simple circuit that combines an RTHEMT with a resistor load, we demonstrate frequency multipliers (both doubler and tripler) and a three-valued logic inverse literal gate.

UR - https://www.scopus.com/pages/publications/0029545616

M3 - Conference article published in journal

AN - SCOPUS:0029545616

SN - 0163-1918

SP - 379

EP - 382

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - Proceedings of the 1995 International Electron Devices Meeting, IEDM'95

Y2 - 10 December 1995 through 13 December 1995

ER -

Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications

Abstract

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