NOVEL MOS DEVICE STRUCTURE WITH S/D CONTACTS OVER OXIDE (COO).

C. H. Dennison; A. T. Wu; P. K. Ko; C. I. Drowley; D. Bradbury

NOVEL MOS DEVICE STRUCTURE WITH S/D CONTACTS OVER OXIDE (COO).

C. H. Dennison^*, A. T. Wu, P. K. Ko, C. I. Drowley, D. Bradbury

^*Corresponding author for this work

Research output: Contribution to journal › Conference article published in journal › peer-review

9 Citations (Scopus)

Abstract

A novel MOS device structure with source/drain (S/D) contacts over oxide (COO) has been developed where the channel region is in a thin high-quality epitaxial Si layer while the S/D diffusion regions extend on top of a thick insulating oxide to minimize S/D diffusion to substrate capacitance. All contacts to S/D diffusion are over insulating oxide thereby reducing contact area and eliminating any spiking problems associated with contacting shallow junctions. Processing details and electrical characterization results for fabricated COO MOSFETs are presented.

Original language	English
Pages (from-to)	204-207
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 1985
Externally published	Yes

Cite this

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title = "NOVEL MOS DEVICE STRUCTURE WITH S/D CONTACTS OVER OXIDE (COO).",

abstract = "A novel MOS device structure with source/drain (S/D) contacts over oxide (COO) has been developed where the channel region is in a thin high-quality epitaxial Si layer while the S/D diffusion regions extend on top of a thick insulating oxide to minimize S/D diffusion to substrate capacitance. All contacts to S/D diffusion are over insulating oxide thereby reducing contact area and eliminating any spiking problems associated with contacting shallow junctions. Processing details and electrical characterization results for fabricated COO MOSFETs are presented.",

author = "Dennison, \{C. H.\} and Wu, \{A. T.\} and Ko, \{P. K.\} and Drowley, \{C. I.\} and D. Bradbury",

year = "1985",

language = "English",

pages = "204--207",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - NOVEL MOS DEVICE STRUCTURE WITH S/D CONTACTS OVER OXIDE (COO).

AU - Dennison, C. H.

AU - Wu, A. T.

AU - Ko, P. K.

AU - Drowley, C. I.

AU - Bradbury, D.

PY - 1985

Y1 - 1985

N2 - A novel MOS device structure with source/drain (S/D) contacts over oxide (COO) has been developed where the channel region is in a thin high-quality epitaxial Si layer while the S/D diffusion regions extend on top of a thick insulating oxide to minimize S/D diffusion to substrate capacitance. All contacts to S/D diffusion are over insulating oxide thereby reducing contact area and eliminating any spiking problems associated with contacting shallow junctions. Processing details and electrical characterization results for fabricated COO MOSFETs are presented.

AB - A novel MOS device structure with source/drain (S/D) contacts over oxide (COO) has been developed where the channel region is in a thin high-quality epitaxial Si layer while the S/D diffusion regions extend on top of a thick insulating oxide to minimize S/D diffusion to substrate capacitance. All contacts to S/D diffusion are over insulating oxide thereby reducing contact area and eliminating any spiking problems associated with contacting shallow junctions. Processing details and electrical characterization results for fabricated COO MOSFETs are presented.

UR - https://www.scopus.com/pages/publications/0022308625

M3 - Conference article published in journal

AN - SCOPUS:0022308625

SN - 0163-1918

SP - 204

EP - 207

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

ER -

NOVEL MOS DEVICE STRUCTURE WITH S/D CONTACTS OVER OXIDE (COO).

Abstract

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