Novel Silicon-On-Insulator (SOI) MOSFET for ultra low voltage operation

Fariborz Assaderaghi; Stephen Parke; Ping K. Ko; Chenming Hu

Novel Silicon-On-Insulator (SOI) MOSFET for ultra low voltage operation

Fariborz Assaderaghi^*, Stephen Parke, Ping K. Ko, Chenming Hu

^*Corresponding author for this work

Research output: Contribution to conference › Conference Paper › peer-review

13 Citations (Scopus)

Abstract

A Variable Threshold Voltage MOSFET (VTMOS) built on Silicon-On-Insulator (SOI) is proposed. The SOI devices used in the study were built on SIMOX wafers. To operate the VTMOS, floating body and gate of a SOI MOSFET are tied together. Most of the improvement can be achieved when gate and body voltages are kept below 0.6 V. This ensures that base current will stay negligible. The behavior of the voltage at different operating modes is discussed.

Original language	English
Pages	58-59
Number of pages	2
Publication status	Published - 1994
Externally published	Yes
Event	Proceedings of the 1994 IEEE Symposium on Low Power Electronics - San Diego, CA, USA Duration: 10 Oct 1994 → 12 Oct 1994

Conference

Conference	Proceedings of the 1994 IEEE Symposium on Low Power Electronics
City	San Diego, CA, USA
Period	10/10/94 → 12/10/94

Cite this

@conference{630bccf8624341858d6319716ce510f8,

title = "Novel Silicon-On-Insulator (SOI) MOSFET for ultra low voltage operation",

abstract = "A Variable Threshold Voltage MOSFET (VTMOS) built on Silicon-On-Insulator (SOI) is proposed. The SOI devices used in the study were built on SIMOX wafers. To operate the VTMOS, floating body and gate of a SOI MOSFET are tied together. Most of the improvement can be achieved when gate and body voltages are kept below 0.6 V. This ensures that base current will stay negligible. The behavior of the voltage at different operating modes is discussed.",

author = "Fariborz Assaderaghi and Stephen Parke and Ko, \{Ping K.\} and Chenming Hu",

year = "1994",

language = "English",

pages = "58--59",

note = "Proceedings of the 1994 IEEE Symposium on Low Power Electronics ; Conference date: 10-10-1994 Through 12-10-1994",

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TY - CONF

T1 - Novel Silicon-On-Insulator (SOI) MOSFET for ultra low voltage operation

AU - Assaderaghi, Fariborz

AU - Parke, Stephen

AU - Ko, Ping K.

AU - Hu, Chenming

PY - 1994

Y1 - 1994

N2 - A Variable Threshold Voltage MOSFET (VTMOS) built on Silicon-On-Insulator (SOI) is proposed. The SOI devices used in the study were built on SIMOX wafers. To operate the VTMOS, floating body and gate of a SOI MOSFET are tied together. Most of the improvement can be achieved when gate and body voltages are kept below 0.6 V. This ensures that base current will stay negligible. The behavior of the voltage at different operating modes is discussed.

AB - A Variable Threshold Voltage MOSFET (VTMOS) built on Silicon-On-Insulator (SOI) is proposed. The SOI devices used in the study were built on SIMOX wafers. To operate the VTMOS, floating body and gate of a SOI MOSFET are tied together. Most of the improvement can be achieved when gate and body voltages are kept below 0.6 V. This ensures that base current will stay negligible. The behavior of the voltage at different operating modes is discussed.

UR - https://www.scopus.com/pages/publications/0028736473

M3 - Conference Paper

AN - SCOPUS:0028736473

SP - 58

EP - 59

T2 - Proceedings of the 1994 IEEE Symposium on Low Power Electronics

Y2 - 10 October 1994 through 12 October 1994

ER -

Novel Silicon-On-Insulator (SOI) MOSFET for ultra low voltage operation

Abstract

Conference

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