TY - GEN
T1 - Numerical study on nanowire tunnel FET with dynamic threshold operation architecture
AU - Zhang, Aixi
AU - He, Jin
AU - Zhu, Xiaoan
AU - Hu, Yue
AU - Wang, Hao
AU - Deng, Wanling
AU - He, Hongyu
AU - Zhu, Ying
AU - Zhang, Xiangyu
AU - Chan, Mansun
PY - 2013
Y1 - 2013
N2 - In this paper, a nanowire tunnel field-effect transistor with dynamic threshold operation architecture (DT-NTFET) is proposed and the numerical study on its characteristics is presented. It shows that, in DT operation, the DT-NTFET can choose the threshold voltage (VT) flexibly by changing the adjust gate voltage, thus it can be applied as a multifunctional device in the future circuit design; in common mode operation, its subthreshold swing (SS) gets steeper, and its drive current is enhanced with no loss of OFF-state current.
AB - In this paper, a nanowire tunnel field-effect transistor with dynamic threshold operation architecture (DT-NTFET) is proposed and the numerical study on its characteristics is presented. It shows that, in DT operation, the DT-NTFET can choose the threshold voltage (VT) flexibly by changing the adjust gate voltage, thus it can be applied as a multifunctional device in the future circuit design; in common mode operation, its subthreshold swing (SS) gets steeper, and its drive current is enhanced with no loss of OFF-state current.
KW - danymic threshold (DT)
KW - nanowire
KW - numerical simulation
KW - tunnel field-effect transistor (TFET)
UR - https://openalex.org/W2087205070
UR - https://www.scopus.com/pages/publications/84890445585
U2 - 10.1109/EDSSC.2013.6628211
DO - 10.1109/EDSSC.2013.6628211
M3 - Conference Paper published in a book
SN - 9781467325233
T3 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
BT - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
T2 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Y2 - 3 June 2013 through 5 June 2013
ER -