Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy

Liwu Lu; Weikun Ge; I. K. Sou; J. Wang

doi:10.1109/ICSICT.2001.982175

Observation of deep electron states in n-type Al-doped ZnS_1-xTe_x grown by molecular beam epitaxy

Liwu Lu, Weikun Ge, I. K. Sou, J. Wang

Department of Physics

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

The deep level transient spectroscopy (DLTS) technique was used to investigate deep electron states in n-type Al-doped ZnS_1-xTe_x epilayers grown by molecular beam epitaxy (MBE). Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS_1-xTe_x (x = 0, 0.017, 0.04 and 0.046, respectively) epilayers reveal that Al doping leads to the formation of two electron traps at 0.21 and 0.39 eV below the conduction band. DLTFS results suggest that in addition to the roles of Te as a component of the alloy as well as isoelectronic centers, Te is also involved in the formation of an electron trap whose energy level relative to the conduction band decreases as Te composition increases.

Original language	English
Title of host publication	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Editors	Hiroshi Iwai, Xin-Ping Qu, Bing-Zong Li, Guo-Ping Ru, Paul Yu
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1446-1448
Number of pages	3
ISBN (Electronic)	0780365208, 9780780365209
DOIs	https://doi.org/10.1109/ICSICT.2001.982175
Publication status	Published - 2001
Event	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China Duration: 22 Oct 2001 → 25 Oct 2001

Publication series

Name	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Volume	2

Conference

Conference	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
Country/Territory	China
City	Shanghai
Period	22/10/01 → 25/10/01

Bibliographical note

Publisher Copyright:
© 2001 IEEE.

Access to Document

10.1109/ICSICT.2001.982175

Cite this

Lu, L., Ge, W., Sou, I. K., & Wang, J. (2001). Observation of deep electron states in n-type Al-doped ZnS_1-xTe_x grown by molecular beam epitaxy. In H. Iwai, X.-P. Qu, B.-Z. Li, G.-P. Ru, & P. Yu (Eds.), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings (pp. 1446-1448). Article 982175 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; Vol. 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2001.982175

Lu, Liwu ; Ge, Weikun ; Sou, I. K. et al. / Observation of deep electron states in n-type Al-doped ZnS_1-xTe_x grown by molecular beam epitaxy. 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. editor / Hiroshi Iwai ; Xin-Ping Qu ; Bing-Zong Li ; Guo-Ping Ru ; Paul Yu. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 1446-1448 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings).

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title = "Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy",

abstract = "The deep level transient spectroscopy (DLTS) technique was used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular beam epitaxy (MBE). Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x = 0, 0.017, 0.04 and 0.046, respectively) epilayers reveal that Al doping leads to the formation of two electron traps at 0.21 and 0.39 eV below the conduction band. DLTFS results suggest that in addition to the roles of Te as a component of the alloy as well as isoelectronic centers, Te is also involved in the formation of an electron trap whose energy level relative to the conduction band decreases as Te composition increases.",

author = "Liwu Lu and Weikun Ge and Sou, \{I. K.\} and J. Wang",

note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 ; Conference date: 22-10-2001 Through 25-10-2001",

year = "2001",

doi = "10.1109/ICSICT.2001.982175",

language = "English",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1446--1448",

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Lu, L, Ge, W, Sou, IK & Wang, J 2001, Observation of deep electron states in n-type Al-doped ZnS_1-xTe_x grown by molecular beam epitaxy. in H Iwai, X-P Qu, B-Z Li, G-P Ru & P Yu (eds), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings., 982175, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings, vol. 2, Institute of Electrical and Electronics Engineers Inc., pp. 1446-1448, 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001, Shanghai, China, 22/10/01. https://doi.org/10.1109/ICSICT.2001.982175

Observation of deep electron states in n-type Al-doped ZnS_1-xTe_x grown by molecular beam epitaxy. / Lu, Liwu; Ge, Weikun; Sou, I. K. et al.
2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. ed. / Hiroshi Iwai; Xin-Ping Qu; Bing-Zong Li; Guo-Ping Ru; Paul Yu. Institute of Electrical and Electronics Engineers Inc., 2001. p. 1446-1448 982175 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; Vol. 2).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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T1 - Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy

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N2 - The deep level transient spectroscopy (DLTS) technique was used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular beam epitaxy (MBE). Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x = 0, 0.017, 0.04 and 0.046, respectively) epilayers reveal that Al doping leads to the formation of two electron traps at 0.21 and 0.39 eV below the conduction band. DLTFS results suggest that in addition to the roles of Te as a component of the alloy as well as isoelectronic centers, Te is also involved in the formation of an electron trap whose energy level relative to the conduction band decreases as Te composition increases.

AB - The deep level transient spectroscopy (DLTS) technique was used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular beam epitaxy (MBE). Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x = 0, 0.017, 0.04 and 0.046, respectively) epilayers reveal that Al doping leads to the formation of two electron traps at 0.21 and 0.39 eV below the conduction band. DLTFS results suggest that in addition to the roles of Te as a component of the alloy as well as isoelectronic centers, Te is also involved in the formation of an electron trap whose energy level relative to the conduction band decreases as Te composition increases.

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T3 - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

SP - 1446

EP - 1448

BT - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

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PB - Institute of Electrical and Electronics Engineers Inc.

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Lu L, Ge W, Sou IK, Wang J. Observation of deep electron states in n-type Al-doped ZnS_1-xTe_x grown by molecular beam epitaxy. In Iwai H, Qu XP, Li BZ, Ru GP, Yu P, editors, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2001. p. 1446-1448. 982175. (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings). doi: 10.1109/ICSICT.2001.982175