Observation of negative differential resistance from a Schottky-barrier structure embedded with Fe quantum dots

S. K. Lok; B. K. Li; J. N. Wang; G. K.L. Wong; I. K. Sou

doi:10.1016/j.jcrysgro.2008.10.015

Observation of negative differential resistance from a Schottky-barrier structure embedded with Fe quantum dots

S. K. Lok, B. K. Li, J. N. Wang, G. K.L. Wong, I. K. Sou^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal Article › peer-review

5 Citations (Scopus)

Abstract

A Au/ZnS/Fe-quantum dots (QDs)/ZnS/n⁺-GaAs(1 0 0) Schottky-barrier structure containing five layers of spherical Fe QDs with diameter around 3 nm was fabricated by the molecular beam epitaxy technique. Its current-voltage (I-V) characteristics measured from 5 to 295 K display negative differential resistance (NDR) for temperature ≤50 K, which is caused by the presence of Fe QDs. The highest peak-to-valley current ratio obtained at 5 K is as high as 15:1. Staircase-like I-V characteristic was also observed at low temperature in some devices fabricated from this structure. Possible mechanisms that can account for the observed unusual I-V characteristics in this structure were discussed.

Original language	English
Pages (from-to)	2155-2159
Number of pages	5
Journal	Journal of Crystal Growth
Volume	311
Issue number	7
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.10.015
Publication status	Published - 15 Mar 2009

Keywords

A3. Molecular beam epitaxy
B1. Nanomaterials
B2. Magnetic materials
B2. Semiconducting II-VI materials
B3. Heterojunction semiconductor devices

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10.1016/j.jcrysgro.2008.10.015

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title = "Observation of negative differential resistance from a Schottky-barrier structure embedded with Fe quantum dots",

abstract = "A Au/ZnS/Fe-quantum dots (QDs)/ZnS/n+-GaAs(1 0 0) Schottky-barrier structure containing five layers of spherical Fe QDs with diameter around 3 nm was fabricated by the molecular beam epitaxy technique. Its current-voltage (I-V) characteristics measured from 5 to 295 K display negative differential resistance (NDR) for temperature ≤50 K, which is caused by the presence of Fe QDs. The highest peak-to-valley current ratio obtained at 5 K is as high as 15:1. Staircase-like I-V characteristic was also observed at low temperature in some devices fabricated from this structure. Possible mechanisms that can account for the observed unusual I-V characteristics in this structure were discussed.",

keywords = "A3. Molecular beam epitaxy, B1. Nanomaterials, B2. Magnetic materials, B2. Semiconducting II-VI materials, B3. Heterojunction semiconductor devices",

author = "Lok, \{S. K.\} and Li, \{B. K.\} and Wang, \{J. N.\} and Wong, \{G. K.L.\} and Sou, \{I. K.\}",

year = "2009",

month = mar,

day = "15",

doi = "10.1016/j.jcrysgro.2008.10.015",

language = "English",

volume = "311",

pages = "2155--2159",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "7",

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TY - JOUR

T1 - Observation of negative differential resistance from a Schottky-barrier structure embedded with Fe quantum dots

AU - Lok, S. K.

AU - Li, B. K.

AU - Wang, J. N.

AU - Wong, G. K.L.

AU - Sou, I. K.

PY - 2009/3/15

Y1 - 2009/3/15

N2 - A Au/ZnS/Fe-quantum dots (QDs)/ZnS/n+-GaAs(1 0 0) Schottky-barrier structure containing five layers of spherical Fe QDs with diameter around 3 nm was fabricated by the molecular beam epitaxy technique. Its current-voltage (I-V) characteristics measured from 5 to 295 K display negative differential resistance (NDR) for temperature ≤50 K, which is caused by the presence of Fe QDs. The highest peak-to-valley current ratio obtained at 5 K is as high as 15:1. Staircase-like I-V characteristic was also observed at low temperature in some devices fabricated from this structure. Possible mechanisms that can account for the observed unusual I-V characteristics in this structure were discussed.

AB - A Au/ZnS/Fe-quantum dots (QDs)/ZnS/n+-GaAs(1 0 0) Schottky-barrier structure containing five layers of spherical Fe QDs with diameter around 3 nm was fabricated by the molecular beam epitaxy technique. Its current-voltage (I-V) characteristics measured from 5 to 295 K display negative differential resistance (NDR) for temperature ≤50 K, which is caused by the presence of Fe QDs. The highest peak-to-valley current ratio obtained at 5 K is as high as 15:1. Staircase-like I-V characteristic was also observed at low temperature in some devices fabricated from this structure. Possible mechanisms that can account for the observed unusual I-V characteristics in this structure were discussed.

KW - A3. Molecular beam epitaxy

KW - B1. Nanomaterials

KW - B2. Magnetic materials

KW - B2. Semiconducting II-VI materials

KW - B3. Heterojunction semiconductor devices

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000265659300128

UR - https://openalex.org/W2064497547

UR - https://www.scopus.com/pages/publications/63349095329

U2 - 10.1016/j.jcrysgro.2008.10.015

DO - 10.1016/j.jcrysgro.2008.10.015

M3 - Journal Article

SN - 0022-0248

VL - 311

SP - 2155

EP - 2159

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 7

ER -

Observation of negative differential resistance from a Schottky-barrier structure embedded with Fe quantum dots

Abstract

Keywords

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