Observation of Velocity Overshoot in Silicon Inversion Layers

Fariborz Assaderaghi; Ping Keung Ko; Chenming Hu

doi:10.1109/55.244738

Observation of Velocity Overshoot in Silicon Inversion Layers

Fariborz Assaderaghi, Ping Keung Ko, Chenming Hu

Research output: Contribution to journal › Journal Article › peer-review

39 Citations (Scopus)

Abstract

Employing a novel test structure, electron velocity overshoot in silicon inversion layers is observed at room temperature. For channel lengths longer than 03μm, the velocity/field relation follows the well-known behavior with no channel length dependence. The first indication of velocity overshoot is seen at channel length of 0.22 μm, while at L = 0.12 μm drift velocities up to 35% larger than the long channel value are measured.

Original language	English
Pages (from-to)	484-486
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	14
Issue number	10
DOIs	https://doi.org/10.1109/55.244738
Publication status	Published - Oct 1993
Externally published	Yes

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title = "Observation of Velocity Overshoot in Silicon Inversion Layers",

abstract = "Employing a novel test structure, electron velocity overshoot in silicon inversion layers is observed at room temperature. For channel lengths longer than 03μm, the velocity/field relation follows the well-known behavior with no channel length dependence. The first indication of velocity overshoot is seen at channel length of 0.22 μm, while at L = 0.12 μm drift velocities up to 35\% larger than the long channel value are measured.",

author = "Fariborz Assaderaghi and Ko, \{Ping Keung\} and Chenming Hu",

year = "1993",

month = oct,

doi = "10.1109/55.244738",

language = "English",

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pages = "484--486",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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AU - Assaderaghi, Fariborz

AU - Ko, Ping Keung

AU - Hu, Chenming

PY - 1993/10

Y1 - 1993/10

N2 - Employing a novel test structure, electron velocity overshoot in silicon inversion layers is observed at room temperature. For channel lengths longer than 03μm, the velocity/field relation follows the well-known behavior with no channel length dependence. The first indication of velocity overshoot is seen at channel length of 0.22 μm, while at L = 0.12 μm drift velocities up to 35% larger than the long channel value are measured.

AB - Employing a novel test structure, electron velocity overshoot in silicon inversion layers is observed at room temperature. For channel lengths longer than 03μm, the velocity/field relation follows the well-known behavior with no channel length dependence. The first indication of velocity overshoot is seen at channel length of 0.22 μm, while at L = 0.12 μm drift velocities up to 35% larger than the long channel value are measured.

UR - https://www.scopus.com/pages/publications/0027678066

U2 - 10.1109/55.244738

DO - 10.1109/55.244738

M3 - Journal Article

AN - SCOPUS:0027678066

SN - 0741-3106

VL - 14

SP - 484

EP - 486

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

Observation of Velocity Overshoot in Silicon Inversion Layers

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