Offset Metal Indusced Laterial Crystallized Poly-silicon TFTs

While low-temperature thin film transistor with metal-induced-laterally-crystallized (MILC) channels are better than their solid-phase-crystallized (SPC) counterparts in many device performance measures, they suffer from higher off-state leakage current and lower drain breakdown voltage because of the self-aligned metal-induction-crystallized (MIC) source and drain regions. A new technology that enables the removal of all major grain boundaries transverse to the drain current flow is presently proposed, resulting in devices with higher field-effect mobility and significantly reduced leakage current, as well as much improved spatial uniformity of device parameters.