On the capacitance of vacuum microelectronic devices with different field emitter shapes

Baoping Wang; Yongming Tang; Johnny K.O. Sin; Vincent M.C. Poon

On the capacitance of vacuum microelectronic devices with different field emitter shapes

Baoping Wang^*, Yongming Tang, Johnny K.O. Sin, Vincent M.C. Poon

^*Corresponding author for this work

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

In this paper, capacitance of diode vacuum microelectronic devices with different field emitter shapes are studied. By using finite difference method, electric field and capacitance of field emitters with five different shapes are calculated. Calculation results show that the emitter shape has a larger effect on the field enhancement than on the capacitance. When the anode diameter is decreased from 8 μm to 4 μm, the capacitance can be decreased by ten times for the sharp tip-on-post field emitter. When the distance between the cathode and the anode and the height of the field emitter are increased by 2 μm, the capacitance can be increased by about 30% for the sharp tip-on-post field emitter.

Original language	English
Pages	509-513
Number of pages	5
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 7 Jul 1996 → 12 Jul 1996

Conference

Conference	Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
City	St.Petersburg, Russia
Period	7/07/96 → 12/07/96

Cite this

@conference{ad78f6a2c138497ead4db10daa19909f,

title = "On the capacitance of vacuum microelectronic devices with different field emitter shapes",

abstract = "In this paper, capacitance of diode vacuum microelectronic devices with different field emitter shapes are studied. By using finite difference method, electric field and capacitance of field emitters with five different shapes are calculated. Calculation results show that the emitter shape has a larger effect on the field enhancement than on the capacitance. When the anode diameter is decreased from 8 μm to 4 μm, the capacitance can be decreased by ten times for the sharp tip-on-post field emitter. When the distance between the cathode and the anode and the height of the field emitter are increased by 2 μm, the capacitance can be increased by about 30\% for the sharp tip-on-post field emitter.",

author = "Baoping Wang and Yongming Tang and Sin, \{Johnny K.O.\} and Poon, \{Vincent M.C.\}",

year = "1996",

language = "English",

pages = "509--513",

note = "Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC ; Conference date: 07-07-1996 Through 12-07-1996",

}

TY - CONF

T1 - On the capacitance of vacuum microelectronic devices with different field emitter shapes

AU - Wang, Baoping

AU - Tang, Yongming

AU - Sin, Johnny K.O.

AU - Poon, Vincent M.C.

PY - 1996

Y1 - 1996

N2 - In this paper, capacitance of diode vacuum microelectronic devices with different field emitter shapes are studied. By using finite difference method, electric field and capacitance of field emitters with five different shapes are calculated. Calculation results show that the emitter shape has a larger effect on the field enhancement than on the capacitance. When the anode diameter is decreased from 8 μm to 4 μm, the capacitance can be decreased by ten times for the sharp tip-on-post field emitter. When the distance between the cathode and the anode and the height of the field emitter are increased by 2 μm, the capacitance can be increased by about 30% for the sharp tip-on-post field emitter.

AB - In this paper, capacitance of diode vacuum microelectronic devices with different field emitter shapes are studied. By using finite difference method, electric field and capacitance of field emitters with five different shapes are calculated. Calculation results show that the emitter shape has a larger effect on the field enhancement than on the capacitance. When the anode diameter is decreased from 8 μm to 4 μm, the capacitance can be decreased by ten times for the sharp tip-on-post field emitter. When the distance between the cathode and the anode and the height of the field emitter are increased by 2 μm, the capacitance can be increased by about 30% for the sharp tip-on-post field emitter.

UR - https://www.scopus.com/pages/publications/0030361811

M3 - Conference Paper

AN - SCOPUS:0030361811

SP - 509

EP - 513

T2 - Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC

Y2 - 7 July 1996 through 12 July 1996

ER -

On the capacitance of vacuum microelectronic devices with different field emitter shapes

Abstract

Conference

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