Abstract
Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by directly solving self-heating equations, the internal node is eliminated in the circuit Jacobian matrix. The resulting simulation time can be shortened in principle up to 60% or more without sacrificing the accuracy. The accuracy and time for self-heating simulations formulated using different approaches are compared in this paper to study their tradeoff. In addition, a generic approach to eliminate the need for internal nodes is proposed and demonstrated using the non-quasi-static effect model.
| Original language | English |
|---|---|
| Pages (from-to) | 291-297 |
| Number of pages | 7 |
| Journal | IEEE Journal of the Electron Devices Society |
| Volume | 6 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 5 Feb 2018 |
Bibliographical note
Publisher Copyright:© 2013 IEEE.
Keywords
- FinFETs circuits
- Self-heating
- circuit self-heating
- internal-node free
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