Optical study of electronic states in GaAsN

X. D. Luo; C. L. Yang; J. S. Huang; Z. Y. Xu; J. Liu; W. K. Ge; Y. Zhang; A. Mascarenhas; H. P. Xin; C. W. Tu

doi:10.1109/COMMAD.2002.1237320

Optical study of electronic states in GaAsN

X. D. Luo
, C. L. Yang
, J. S. Huang
, Z. Y. Xu
, J. Liu
, W. K. Ge
, Y. Zhang
, A. Mascarenhas
, H. P. Xin
, C. W. Tu

Department of Physics

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

GaAs_1-xN_x alloys with small N composition (x<l%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitaiton PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.

Original language	English
Title of host publication	2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
Editors	Michael Gal
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	587-590
Number of pages	4
ISBN (Electronic)	0780375718
DOIs	https://doi.org/10.1109/COMMAD.2002.1237320
Publication status	Published - 2002
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia Duration: 11 Dec 2002 → 13 Dec 2002

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume	2002-January

Conference

Conference	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Country/Territory	Australia
City	Sydney
Period	11/12/02 → 13/12/02

Bibliographical note

Publisher Copyright:
© 2002 IEEE.

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10.1109/COMMAD.2002.1237320

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Luo, X. D., Yang, C. L., Huang, J. S., Xu, Z. Y., Liu, J., Ge, W. K., Zhang, Y., Mascarenhas, A., Xin, H. P., & Tu, C. W. (2002). Optical study of electronic states in GaAsN. In M. Gal (Ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings (pp. 587-590). Article 1237320 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2002.1237320

Luo, X. D. ; Yang, C. L. ; Huang, J. S. et al. / Optical study of electronic states in GaAsN. 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. editor / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 587-590 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

@inproceedings{97daec14b516429dade26252a57bead3,

title = "Optical study of electronic states in GaAsN",

abstract = "GaAs1-xNx alloys with small N composition (x",

author = "Luo, \{X. D.\} and Yang, \{C. L.\} and Huang, \{J. S.\} and Xu, \{Z. Y.\} and J. Liu and Ge, \{W. K.\} and Y. Zhang and A. Mascarenhas and Xin, \{H. P.\} and Tu, \{C. W.\}",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 ; Conference date: 11-12-2002 Through 13-12-2002",

year = "2002",

doi = "10.1109/COMMAD.2002.1237320",

language = "English",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "587--590",

editor = "Michael Gal",

booktitle = "2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings",

}

Luo, XD, Yang, CL, Huang, JS, Xu, ZY, Liu, J, Ge, WK, Zhang, Y, Mascarenhas, A, Xin, HP & Tu, CW 2002, Optical study of electronic states in GaAsN. in M Gal (ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings., 1237320, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 587-590, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002, Sydney, Australia, 11/12/02. https://doi.org/10.1109/COMMAD.2002.1237320

Optical study of electronic states in GaAsN. / Luo, X. D.; Yang, C. L.; Huang, J. S. et al.
2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. ed. / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. p. 587-590 1237320 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Optical study of electronic states in GaAsN

AU - Luo, X. D.

AU - Yang, C. L.

AU - Huang, J. S.

AU - Xu, Z. Y.

AU - Liu, J.

AU - Ge, W. K.

AU - Zhang, Y.

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N2 - GaAs1-xNx alloys with small N composition (x

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UR - https://www.scopus.com/pages/publications/84952654803

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M3 - Conference Paper published in a book

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T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

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BT - 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings

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PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002

Y2 - 11 December 2002 through 13 December 2002

ER -

Luo XD, Yang CL, Huang JS, Xu ZY, Liu J, Ge WK et al. Optical study of electronic states in GaAsN. In Gal M, editor, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 587-590. 1237320. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2002.1237320

Optical study of electronic states in GaAsN

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