Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction

Lei Lu; Mingxiang Wang; Man Wong

doi:10.1109/ICSICT.2008.4734707

Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction

Lei Lu^*, Mingxiang Wang, Man Wong

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

Charge pumping (CP) technique is optimized to minimize the geometric component in the CP current in polysilicon TFTs, by taking into account the pulse waveform and its transition times. Based on the optimization, ideal CP curves similar to those in MOSFETs are obtained. Important information on the trap state density of polysilicon TFTs, i.e., the mean value as well as the energy distribution within the band-gap, can be reliably extracted in different ways.

Original language	English
Title of host publication	ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	978-981
Number of pages	4
ISBN (Print)	9781424421855
DOIs	https://doi.org/10.1109/ICSICT.2008.4734707
Publication status	Published - 2008
Event	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: 20 Oct 2008 → 23 Oct 2008

Publication series

Name	International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Conference

Conference	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Country/Territory	China
City	Beijing
Period	20/10/08 → 23/10/08

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10.1109/ICSICT.2008.4734707

Cite this

Lu, L., Wang, M., & Wong, M. (2008). Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 978-981). (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2008.4734707

Lu, Lei ; Wang, Mingxiang ; Wong, Man. / Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction. ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. Institute of Electrical and Electronics Engineers Inc., 2008. pp. 978-981 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

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title = "Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction",

abstract = "Charge pumping (CP) technique is optimized to minimize the geometric component in the CP current in polysilicon TFTs, by taking into account the pulse waveform and its transition times. Based on the optimization, ideal CP curves similar to those in MOSFETs are obtained. Important information on the trap state density of polysilicon TFTs, i.e., the mean value as well as the energy distribution within the band-gap, can be reliably extracted in different ways.",

author = "Lei Lu and Mingxiang Wang and Man Wong",

year = "2008",

doi = "10.1109/ICSICT.2008.4734707",

language = "English",

isbn = "9781424421855",

series = "International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "978--981",

booktitle = "ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings",

note = "2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 ; Conference date: 20-10-2008 Through 23-10-2008",

}

Lu, L, Wang, M & Wong, M 2008, Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, Institute of Electrical and Electronics Engineers Inc., pp. 978-981, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 20/10/08. https://doi.org/10.1109/ICSICT.2008.4734707

Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction. / Lu, Lei; Wang, Mingxiang; Wong, Man.
ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. Institute of Electrical and Electronics Engineers Inc., 2008. p. 978-981 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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AU - Lu, Lei

AU - Wang, Mingxiang

AU - Wong, Man

PY - 2008

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N2 - Charge pumping (CP) technique is optimized to minimize the geometric component in the CP current in polysilicon TFTs, by taking into account the pulse waveform and its transition times. Based on the optimization, ideal CP curves similar to those in MOSFETs are obtained. Important information on the trap state density of polysilicon TFTs, i.e., the mean value as well as the energy distribution within the band-gap, can be reliably extracted in different ways.

AB - Charge pumping (CP) technique is optimized to minimize the geometric component in the CP current in polysilicon TFTs, by taking into account the pulse waveform and its transition times. Based on the optimization, ideal CP curves similar to those in MOSFETs are obtained. Important information on the trap state density of polysilicon TFTs, i.e., the mean value as well as the energy distribution within the band-gap, can be reliably extracted in different ways.

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DO - 10.1109/ICSICT.2008.4734707

M3 - Conference Paper published in a book

SN - 9781424421855

T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

SP - 978

EP - 981

BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008

Y2 - 20 October 2008 through 23 October 2008

ER -

Lu L, Wang M, Wong M. Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. Institute of Electrical and Electronics Engineers Inc. 2008. p. 978-981. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). doi: 10.1109/ICSICT.2008.4734707

Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction

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