Optimization of the fabrication process for bridged-grain metal induced crystallization TFTs

Rongsheng Chen; Wei Zhou; Meng Zhang; Zhihe Xia; Man Wong; Hoi Sing Kwok

doi:10.1002/sdtp.10060

Optimization of the fabrication process for bridged-grain metal induced crystallization TFTs

Rongsheng Chen, Wei Zhou, Meng Zhang, Zhihe Xia, Man Wong, Hoi Sing Kwok

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Conference article published in journal › peer-review

Abstract

Bridged-grain (BG) metal induced crystallization (MIC) thin film transistor (TFTs) technology has great potential to realize next generation high resolution and large size flat-panel displays. The required time for MIC crystallization process of amorphous silicon (a-Si) thin film is typically about 10 hours in inert atmosphere. In this paper we proposed two optimized schemes for BG-MIC TFTs to improve the device performance and reduce the process time.

Original language	English
Pages (from-to)	1205-1208
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	46
Issue number	Book 3
DOIs	https://doi.org/10.1002/sdtp.10060
Publication status	Published - 1 Jun 2015
Event	2015 SID International Symposium - San Jose, United States Duration: 2 Jun 2015 → 3 Jun 2015

Bibliographical note

Publisher Copyright:
© 2015 SID.

Keywords

Annealing time
Bridged grain
Metal induced crystallization
Oxidizing atmosphere
Thin film transistors

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10.1002/sdtp.10060

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title = "Optimization of the fabrication process for bridged-grain metal induced crystallization TFTs",

abstract = "Bridged-grain (BG) metal induced crystallization (MIC) thin film transistor (TFTs) technology has great potential to realize next generation high resolution and large size flat-panel displays. The required time for MIC crystallization process of amorphous silicon (a-Si) thin film is typically about 10 hours in inert atmosphere. In this paper we proposed two optimized schemes for BG-MIC TFTs to improve the device performance and reduce the process time.",

keywords = "Annealing time, Bridged grain, Metal induced crystallization, Oxidizing atmosphere, Thin film transistors",

author = "Rongsheng Chen and Wei Zhou and Meng Zhang and Zhihe Xia and Man Wong and Kwok, \{Hoi Sing\}",

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T1 - Optimization of the fabrication process for bridged-grain metal induced crystallization TFTs

AU - Chen, Rongsheng

AU - Zhou, Wei

AU - Zhang, Meng

AU - Xia, Zhihe

AU - Wong, Man

AU - Kwok, Hoi Sing

PY - 2015/6/1

Y1 - 2015/6/1

N2 - Bridged-grain (BG) metal induced crystallization (MIC) thin film transistor (TFTs) technology has great potential to realize next generation high resolution and large size flat-panel displays. The required time for MIC crystallization process of amorphous silicon (a-Si) thin film is typically about 10 hours in inert atmosphere. In this paper we proposed two optimized schemes for BG-MIC TFTs to improve the device performance and reduce the process time.

AB - Bridged-grain (BG) metal induced crystallization (MIC) thin film transistor (TFTs) technology has great potential to realize next generation high resolution and large size flat-panel displays. The required time for MIC crystallization process of amorphous silicon (a-Si) thin film is typically about 10 hours in inert atmosphere. In this paper we proposed two optimized schemes for BG-MIC TFTs to improve the device performance and reduce the process time.

KW - Annealing time

KW - Bridged grain

KW - Metal induced crystallization

KW - Oxidizing atmosphere

KW - Thin film transistors

UR - https://openalex.org/W2173699897

UR - https://www.scopus.com/pages/publications/84962733207

U2 - 10.1002/sdtp.10060

DO - 10.1002/sdtp.10060

M3 - Conference article published in journal

SN - 0097-966X

VL - 46

SP - 1205

EP - 1208

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - Book 3

T2 - 2015 SID International Symposium

Y2 - 2 June 2015 through 3 June 2015

ER -

Optimization of the fabrication process for bridged-grain metal induced crystallization TFTs

Abstract

Bibliographical note

Keywords

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