Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium

Barabara E. Landini; Farid Agahi; Kei May Lau

doi:10.1007/BF02684201

Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium

Barabara E. Landini^*, Farid Agahi, Kei May Lau

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

2 Citations (Scopus)

Abstract

Optimization of the electrical characteristics of undoped GaAs grown by low-pressure OMVPE using trimethylgallium is presented. The use of a lower growth pressure was found to reduce both the n- and p-type background impurity incorporation. Both electrical and optical measurements revealed that the arsine partial pressure controls the background impurity level during low-pressure growth. Variation of this parameter allowed the attainment of both high mobility (maximum of 136,000 cm²/V-sec at 77 K in this study) and high resistivity layers suitable for field-effect transistor buffers. AlGaAs/ GaAs two-dimensional electron gas structures and GaAs MESFETs using the high resistivity buffer layers showed excellent electrical characteristics. Similar trends were obtained using different AsH₃ sources despite variations in purity.

Original language	English
Pages (from-to)	947-953
Number of pages	7
Journal	Journal of Electronic Materials
Volume	21
Issue number	10
DOIs	https://doi.org/10.1007/BF02684201
Publication status	Published - Oct 1992
Externally published	Yes

Keywords

Undoped GaAs
low-pressure organometallic chemical vapor deposition

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10.1007/BF02684201

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@article{a15cfcade0634f61a038d580bd420092,

title = "Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium",

abstract = "Optimization of the electrical characteristics of undoped GaAs grown by low-pressure OMVPE using trimethylgallium is presented. The use of a lower growth pressure was found to reduce both the n- and p-type background impurity incorporation. Both electrical and optical measurements revealed that the arsine partial pressure controls the background impurity level during low-pressure growth. Variation of this parameter allowed the attainment of both high mobility (maximum of 136,000 cm2/V-sec at 77 K in this study) and high resistivity layers suitable for field-effect transistor buffers. AlGaAs/ GaAs two-dimensional electron gas structures and GaAs MESFETs using the high resistivity buffer layers showed excellent electrical characteristics. Similar trends were obtained using different AsH3 sources despite variations in purity.",

keywords = "Undoped GaAs, low-pressure organometallic chemical vapor deposition",

author = "Landini, \{Barabara E.\} and Farid Agahi and Lau, \{Kei May\}",

year = "1992",

month = oct,

doi = "10.1007/BF02684201",

language = "English",

volume = "21",

pages = "947--953",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "10",

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TY - JOUR

T1 - Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium

AU - Landini, Barabara E.

AU - Agahi, Farid

AU - Lau, Kei May

PY - 1992/10

Y1 - 1992/10

N2 - Optimization of the electrical characteristics of undoped GaAs grown by low-pressure OMVPE using trimethylgallium is presented. The use of a lower growth pressure was found to reduce both the n- and p-type background impurity incorporation. Both electrical and optical measurements revealed that the arsine partial pressure controls the background impurity level during low-pressure growth. Variation of this parameter allowed the attainment of both high mobility (maximum of 136,000 cm2/V-sec at 77 K in this study) and high resistivity layers suitable for field-effect transistor buffers. AlGaAs/ GaAs two-dimensional electron gas structures and GaAs MESFETs using the high resistivity buffer layers showed excellent electrical characteristics. Similar trends were obtained using different AsH3 sources despite variations in purity.

AB - Optimization of the electrical characteristics of undoped GaAs grown by low-pressure OMVPE using trimethylgallium is presented. The use of a lower growth pressure was found to reduce both the n- and p-type background impurity incorporation. Both electrical and optical measurements revealed that the arsine partial pressure controls the background impurity level during low-pressure growth. Variation of this parameter allowed the attainment of both high mobility (maximum of 136,000 cm2/V-sec at 77 K in this study) and high resistivity layers suitable for field-effect transistor buffers. AlGaAs/ GaAs two-dimensional electron gas structures and GaAs MESFETs using the high resistivity buffer layers showed excellent electrical characteristics. Similar trends were obtained using different AsH3 sources despite variations in purity.

KW - Undoped GaAs

KW - low-pressure organometallic chemical vapor deposition

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1992JT69900002

UR - https://openalex.org/W1987062429

UR - https://www.scopus.com/pages/publications/0026931012

U2 - 10.1007/BF02684201

DO - 10.1007/BF02684201

M3 - Journal Article

SN - 0361-5235

VL - 21

SP - 947

EP - 953

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 10

ER -

Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium

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Keywords

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