Oxide TFT Frontend Amplifiers for Flexible Sensing Systems

Yuming Xu; Zhaohui Wu; Bin Li; Sunbin Deng; Wei Zhong; Guijun Li; Dongxiang Luo; Fion Sze Yan Yeung; Hoi Sing Kwok; Rongsheng Chen

doi:10.1109/TED.2021.3120023

Oxide TFT Frontend Amplifiers for Flexible Sensing Systems

Yuming Xu
, Zhaohui Wu
, Bin Li^*
, Sunbin Deng^*
, Wei Zhong
, Guijun Li
, Dongxiang Luo
, Fion Sze Yan Yeung
, Hoi Sing Kwok
, Rongsheng Chen^*

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

19 Citations (Scopus)

Abstract

This article presents a frontend amplifier based on the 50- $\mu \text{m}$ channel length n-type only indium-tin-oxide (ITO)-stabilized ZnO thin-film transistors (TFTs) on glass substrate. The amplifier has an external-bias ac-coupled, open-loop capacitor bootstrap structure. The area and power consumption are 41 mm2 and 0.1 mW (8-V supply), respectively. Electrical measurement results show a gain of 20 dB, a bandwidth of 3 Hz-6 kHz, a common-mode rejection ratio (CMRR) up to 42 dB, an input impedance of 100 $\text{M}\Omega $ , and an input-referred noise of $106 ~\mu \text{V}_{rms}$ (integrated from 1 to 200 Hz). The noise efficiency factor (NEF) and power efficiency factor (PEF) of the amplifier are, respectively, 248 and $4.9\times10$ 5, which is comparable among the state of the arts. The amplifier is successfully used to measure the heart-rate signal, which demonstrates its practicality.

Original language	English
Pages (from-to)	6190-6196
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	68
Issue number	12
DOIs	https://doi.org/10.1109/TED.2021.3120023
Publication status	Published - 1 Dec 2021

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Frontend amplifier
heart-rate measurement
metal-oxide thin-film transistors (TFTs)

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10.1109/TED.2021.3120023

Cite this

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title = "Oxide TFT Frontend Amplifiers for Flexible Sensing Systems",

abstract = "This article presents a frontend amplifier based on the 50- \$\textbackslash{}mu \textbackslash{}text\{m\}\$ channel length n-type only indium-tin-oxide (ITO)-stabilized ZnO thin-film transistors (TFTs) on glass substrate. The amplifier has an external-bias ac-coupled, open-loop capacitor bootstrap structure. The area and power consumption are 41 mm2 and 0.1 mW (8-V supply), respectively. Electrical measurement results show a gain of 20 dB, a bandwidth of 3 Hz-6 kHz, a common-mode rejection ratio (CMRR) up to 42 dB, an input impedance of 100 \$\textbackslash{}text\{M\}\textbackslash{}Omega \$ , and an input-referred noise of \$106 \textasciitilde{}\textbackslash{}mu \textbackslash{}text\{V\}\_\{rms\}\$ (integrated from 1 to 200 Hz). The noise efficiency factor (NEF) and power efficiency factor (PEF) of the amplifier are, respectively, 248 and \$4.9\textbackslash{}times10\$ 5, which is comparable among the state of the arts. The amplifier is successfully used to measure the heart-rate signal, which demonstrates its practicality.",

keywords = "Frontend amplifier, heart-rate measurement, metal-oxide thin-film transistors (TFTs)",

author = "Yuming Xu and Zhaohui Wu and Bin Li and Sunbin Deng and Wei Zhong and Guijun Li and Dongxiang Luo and \{Sze Yan Yeung\}, Fion and Kwok, \{Hoi Sing\} and Rongsheng Chen",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2021",

month = dec,

day = "1",

doi = "10.1109/TED.2021.3120023",

language = "English",

volume = "68",

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TY - JOUR

T1 - Oxide TFT Frontend Amplifiers for Flexible Sensing Systems

AU - Xu, Yuming

AU - Wu, Zhaohui

AU - Li, Bin

AU - Deng, Sunbin

AU - Zhong, Wei

AU - Li, Guijun

AU - Luo, Dongxiang

AU - Sze Yan Yeung, Fion

AU - Kwok, Hoi Sing

AU - Chen, Rongsheng

PY - 2021/12/1

Y1 - 2021/12/1

N2 - This article presents a frontend amplifier based on the 50- $\mu \text{m}$ channel length n-type only indium-tin-oxide (ITO)-stabilized ZnO thin-film transistors (TFTs) on glass substrate. The amplifier has an external-bias ac-coupled, open-loop capacitor bootstrap structure. The area and power consumption are 41 mm2 and 0.1 mW (8-V supply), respectively. Electrical measurement results show a gain of 20 dB, a bandwidth of 3 Hz-6 kHz, a common-mode rejection ratio (CMRR) up to 42 dB, an input impedance of 100 $\text{M}\Omega $ , and an input-referred noise of $106 ~\mu \text{V}_{rms}$ (integrated from 1 to 200 Hz). The noise efficiency factor (NEF) and power efficiency factor (PEF) of the amplifier are, respectively, 248 and $4.9\times10$ 5, which is comparable among the state of the arts. The amplifier is successfully used to measure the heart-rate signal, which demonstrates its practicality.

AB - This article presents a frontend amplifier based on the 50- $\mu \text{m}$ channel length n-type only indium-tin-oxide (ITO)-stabilized ZnO thin-film transistors (TFTs) on glass substrate. The amplifier has an external-bias ac-coupled, open-loop capacitor bootstrap structure. The area and power consumption are 41 mm2 and 0.1 mW (8-V supply), respectively. Electrical measurement results show a gain of 20 dB, a bandwidth of 3 Hz-6 kHz, a common-mode rejection ratio (CMRR) up to 42 dB, an input impedance of 100 $\text{M}\Omega $ , and an input-referred noise of $106 ~\mu \text{V}_{rms}$ (integrated from 1 to 200 Hz). The noise efficiency factor (NEF) and power efficiency factor (PEF) of the amplifier are, respectively, 248 and $4.9\times10$ 5, which is comparable among the state of the arts. The amplifier is successfully used to measure the heart-rate signal, which demonstrates its practicality.

KW - Frontend amplifier

KW - heart-rate measurement

KW - metal-oxide thin-film transistors (TFTs)

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UR - https://openalex.org/W3209164364

U2 - 10.1109/TED.2021.3120023

DO - 10.1109/TED.2021.3120023

M3 - Journal Article

SN - 0018-9383

VL - 68

SP - 6190

EP - 6196

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Oxide TFT Frontend Amplifiers for Flexible Sensing Systems

Abstract

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Keywords

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