Oxide TFT Frontend Amplifiers for Flexible Sensing Systems

Yuming Xu, Zhaohui Wu, Bin Li*, Sunbin Deng*, Wei Zhong, Guijun Li, Dongxiang Luo, Fion Sze Yan Yeung, Hoi Sing Kwok, Rongsheng Chen*

*Corresponding author for this work

Research output: Contribution to journalJournal Articlepeer-review

15 Citations (Scopus)

Abstract

This article presents a frontend amplifier based on the 50- $\mu \text{m}$ channel length n-type only indium-tin-oxide (ITO)-stabilized ZnO thin-film transistors (TFTs) on glass substrate. The amplifier has an external-bias ac-coupled, open-loop capacitor bootstrap structure. The area and power consumption are 41 mm2 and 0.1 mW (8-V supply), respectively. Electrical measurement results show a gain of 20 dB, a bandwidth of 3 Hz-6 kHz, a common-mode rejection ratio (CMRR) up to 42 dB, an input impedance of 100 $\text{M}\Omega $ , and an input-referred noise of $106 ~\mu \text{V}_{rms}$ (integrated from 1 to 200 Hz). The noise efficiency factor (NEF) and power efficiency factor (PEF) of the amplifier are, respectively, 248 and $4.9\times10$ 5, which is comparable among the state of the arts. The amplifier is successfully used to measure the heart-rate signal, which demonstrates its practicality.

Original languageEnglish
Pages (from-to)6190-6196
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume68
Issue number12
DOIs
Publication statusPublished - 1 Dec 2021

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

  • Frontend amplifier
  • heart-rate measurement
  • metal-oxide thin-film transistors (TFTs)

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