Oxides grown on textured single-crystal silicon for enhanced conduction

Y. Fong; A. T. Wu; P. K. Ko; C. Hu

doi:10.1063/1.99668

Oxides grown on textured single-crystal silicon for enhanced conduction

Y. Fong^*, A. T. Wu, P. K. Ko, C. Hu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

7 Citations (Scopus)

Abstract

The electrical properties and integrity of oxides grown on textured single-crystal silicon (TSC oxides) are investigated and are compared to oxides grown on untextured single-crystal silicon (normal oxides) and oxides grown on polycrystalline silicon (polyoxides). The 230 Å TSC oxide exhibited enhanced electron injection in both polarities, reducing the voltage necessary for J_G=+1 mA/cm² from 21 V for normal 230 Å oxides to 5 V. This made the 230 Å TSC oxide approximately equivalent to a 60 Å normal oxide. The electron trapping rate for the TSC oxide was similar to that of 230 Å normal oxides but is much smaller than that of polyoxides. Charge-to-breakdown (Q_BD) measurements showed a much better Q_BD histogram (large area capacitors) for the TSC oxide than for 230 Å and 60 Å normal oxides.

Original language	English
Pages (from-to)	1139-1141
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	14
DOIs	https://doi.org/10.1063/1.99668
Publication status	Published - 1988
Externally published	Yes

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@article{23fde61c808748ea8e5ee9e9ed8e0132,

title = "Oxides grown on textured single-crystal silicon for enhanced conduction",

abstract = "The electrical properties and integrity of oxides grown on textured single-crystal silicon (TSC oxides) are investigated and are compared to oxides grown on untextured single-crystal silicon (normal oxides) and oxides grown on polycrystalline silicon (polyoxides). The 230 {\AA} TSC oxide exhibited enhanced electron injection in both polarities, reducing the voltage necessary for JG=+1 mA/cm2 from 21 V for normal 230 {\AA} oxides to 5 V. This made the 230 {\AA} TSC oxide approximately equivalent to a 60 {\AA} normal oxide. The electron trapping rate for the TSC oxide was similar to that of 230 {\AA} normal oxides but is much smaller than that of polyoxides. Charge-to-breakdown (QBD) measurements showed a much better QBD histogram (large area capacitors) for the TSC oxide than for 230 {\AA} and 60 {\AA} normal oxides.",

author = "Y. Fong and Wu, \{A. T.\} and Ko, \{P. K.\} and C. Hu",

year = "1988",

doi = "10.1063/1.99668",

language = "English",

volume = "52",

pages = "1139--1141",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Oxides grown on textured single-crystal silicon for enhanced conduction

AU - Fong, Y.

AU - Wu, A. T.

AU - Ko, P. K.

AU - Hu, C.

PY - 1988

Y1 - 1988

N2 - The electrical properties and integrity of oxides grown on textured single-crystal silicon (TSC oxides) are investigated and are compared to oxides grown on untextured single-crystal silicon (normal oxides) and oxides grown on polycrystalline silicon (polyoxides). The 230 Å TSC oxide exhibited enhanced electron injection in both polarities, reducing the voltage necessary for JG=+1 mA/cm2 from 21 V for normal 230 Å oxides to 5 V. This made the 230 Å TSC oxide approximately equivalent to a 60 Å normal oxide. The electron trapping rate for the TSC oxide was similar to that of 230 Å normal oxides but is much smaller than that of polyoxides. Charge-to-breakdown (QBD) measurements showed a much better QBD histogram (large area capacitors) for the TSC oxide than for 230 Å and 60 Å normal oxides.

AB - The electrical properties and integrity of oxides grown on textured single-crystal silicon (TSC oxides) are investigated and are compared to oxides grown on untextured single-crystal silicon (normal oxides) and oxides grown on polycrystalline silicon (polyoxides). The 230 Å TSC oxide exhibited enhanced electron injection in both polarities, reducing the voltage necessary for JG=+1 mA/cm2 from 21 V for normal 230 Å oxides to 5 V. This made the 230 Å TSC oxide approximately equivalent to a 60 Å normal oxide. The electron trapping rate for the TSC oxide was similar to that of 230 Å normal oxides but is much smaller than that of polyoxides. Charge-to-breakdown (QBD) measurements showed a much better QBD histogram (large area capacitors) for the TSC oxide than for 230 Å and 60 Å normal oxides.

UR - http://www.scopus.com/inward/record.url?scp=1842559714&partnerID=8YFLogxK

U2 - 10.1063/1.99668

DO - 10.1063/1.99668

M3 - Journal Article

AN - SCOPUS:1842559714

SN - 0003-6951

VL - 52

SP - 1139

EP - 1141

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Oxides grown on textured single-crystal silicon for enhanced conduction

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