P-67: Investigation on the hydrogen-assisted Al induced metal crystallization poly-Si

Juan Li; Na Zeng; Chong Luo; Chun Jian Yin; Ming Yang; Zhiguo Meng; Shaozhen Xiong; Hoi Sing Kwok

doi:10.1889/1.3621092

P-67: Investigation on the hydrogen-assisted Al induced metal crystallization poly-Si

Juan Li^*, Na Zeng, Chong Luo, Chun Jian Yin, Ming Yang, Zhiguo Meng, Shaozhen Xiong, Hoi Sing Kwok

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

Abstract

The hydrogen plasma-assistant Al induced crystallization (HAIC) technology has been proposed in this paper. This technology integrates the crystallization and passivation into one process. The annealing time has been reduced by almost half of the traditional AIC technology. Additionally, the HAIC technology can also improve the resulted poly-Si performance obviously. This technology makes the AIC technology more suitable for the industrial application.

Original language	English
Pages (from-to)	1355-1357
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	42 1
DOIs	https://doi.org/10.1889/1.3621092
Publication status	Published - Jun 2011

Access to Document

10.1889/1.3621092

Cite this

@article{ba25afe0dc214e9e92155b06e0f0f40e,

title = "P-67: Investigation on the hydrogen-assisted Al induced metal crystallization poly-Si",

abstract = "The hydrogen plasma-assistant Al induced crystallization (HAIC) technology has been proposed in this paper. This technology integrates the crystallization and passivation into one process. The annealing time has been reduced by almost half of the traditional AIC technology. Additionally, the HAIC technology can also improve the resulted poly-Si performance obviously. This technology makes the AIC technology more suitable for the industrial application.",

author = "Juan Li and Na Zeng and Chong Luo and Yin, \{Chun Jian\} and Ming Yang and Zhiguo Meng and Shaozhen Xiong and Kwok, \{Hoi Sing\}",

year = "2011",

month = jun,

doi = "10.1889/1.3621092",

language = "English",

volume = "42 1",

pages = "1355--1357",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc",

}

TY - JOUR

T1 - P-67

T2 - Investigation on the hydrogen-assisted Al induced metal crystallization poly-Si

AU - Li, Juan

AU - Zeng, Na

AU - Luo, Chong

AU - Yin, Chun Jian

AU - Yang, Ming

AU - Meng, Zhiguo

AU - Xiong, Shaozhen

AU - Kwok, Hoi Sing

PY - 2011/6

Y1 - 2011/6

N2 - The hydrogen plasma-assistant Al induced crystallization (HAIC) technology has been proposed in this paper. This technology integrates the crystallization and passivation into one process. The annealing time has been reduced by almost half of the traditional AIC technology. Additionally, the HAIC technology can also improve the resulted poly-Si performance obviously. This technology makes the AIC technology more suitable for the industrial application.

AB - The hydrogen plasma-assistant Al induced crystallization (HAIC) technology has been proposed in this paper. This technology integrates the crystallization and passivation into one process. The annealing time has been reduced by almost half of the traditional AIC technology. Additionally, the HAIC technology can also improve the resulted poly-Si performance obviously. This technology makes the AIC technology more suitable for the industrial application.

UR - https://openalex.org/W2078411575

UR - https://www.scopus.com/pages/publications/84863228865

U2 - 10.1889/1.3621092

DO - 10.1889/1.3621092

M3 - Journal Article

SN - 0097-966X

VL - 42 1

SP - 1355

EP - 1357

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

ER -

P-67: Investigation on the hydrogen-assisted Al induced metal crystallization poly-Si

Abstract

Access to Document

Other files and links

Fingerprint

Cite this