P-type Doping of Dilute-Anion III-Nitride Materials

Justin C. Goodrich; Damir Borovac; Chee Keong Tan; Nelson Tansu

doi:10.1109/IPC47351.2020.9252377

P-type Doping of Dilute-Anion III-Nitride Materials

Justin C. Goodrich, Damir Borovac, Chee Keong Tan, Nelson Tansu

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

Density Functional Theorem (DFT) calculations were employed to study the p-type doping of dilute-anion III-nitride materials. Results indicate that arsenic incorporation into AlN significantly reduces the ionization energy of magnesium dopants, allowing for a substantial improvement in hole concentrations.

Original language	English
Title of host publication	2020 IEEE Photonics Conference, IPC 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728158914
DOIs	https://doi.org/10.1109/IPC47351.2020.9252377
Publication status	Published - Sept 2020
Externally published	Yes
Event	2020 IEEE Photonics Conference, IPC 2020 - Virtual, Vancouver, Canada Duration: 28 Sept 2020 → 1 Oct 2020

Publication series

Name	2020 IEEE Photonics Conference, IPC 2020 - Proceedings

Conference

Conference	2020 IEEE Photonics Conference, IPC 2020
Country/Territory	Canada
City	Virtual, Vancouver
Period	28/09/20 → 1/10/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

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10.1109/IPC47351.2020.9252377

Cite this

@inproceedings{0ecdb091a90244c1824098310e70dfe4,

title = "P-type Doping of Dilute-Anion III-Nitride Materials",

abstract = "Density Functional Theorem (DFT) calculations were employed to study the p-type doping of dilute-anion III-nitride materials. Results indicate that arsenic incorporation into AlN significantly reduces the ionization energy of magnesium dopants, allowing for a substantial improvement in hole concentrations.",

author = "Goodrich, \{Justin C.\} and Damir Borovac and Tan, \{Chee Keong\} and Nelson Tansu",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE Photonics Conference, IPC 2020 ; Conference date: 28-09-2020 Through 01-10-2020",

year = "2020",

month = sep,

doi = "10.1109/IPC47351.2020.9252377",

language = "English",

series = "2020 IEEE Photonics Conference, IPC 2020 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2020 IEEE Photonics Conference, IPC 2020 - Proceedings",

}

Goodrich, JC, Borovac, D, Tan, CK & Tansu, N 2020, P-type Doping of Dilute-Anion III-Nitride Materials. in 2020 IEEE Photonics Conference, IPC 2020 - Proceedings., 9252377, 2020 IEEE Photonics Conference, IPC 2020 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE Photonics Conference, IPC 2020, Virtual, Vancouver, Canada, 28/09/20. https://doi.org/10.1109/IPC47351.2020.9252377

P-type Doping of Dilute-Anion III-Nitride Materials. / Goodrich, Justin C.; Borovac, Damir; Tan, Chee Keong et al.
2020 IEEE Photonics Conference, IPC 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9252377 (2020 IEEE Photonics Conference, IPC 2020 - Proceedings).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - P-type Doping of Dilute-Anion III-Nitride Materials

AU - Goodrich, Justin C.

AU - Borovac, Damir

AU - Tan, Chee Keong

AU - Tansu, Nelson

PY - 2020/9

Y1 - 2020/9

N2 - Density Functional Theorem (DFT) calculations were employed to study the p-type doping of dilute-anion III-nitride materials. Results indicate that arsenic incorporation into AlN significantly reduces the ionization energy of magnesium dopants, allowing for a substantial improvement in hole concentrations.

AB - Density Functional Theorem (DFT) calculations were employed to study the p-type doping of dilute-anion III-nitride materials. Results indicate that arsenic incorporation into AlN significantly reduces the ionization energy of magnesium dopants, allowing for a substantial improvement in hole concentrations.

UR - https://www.scopus.com/pages/publications/85097865862

U2 - 10.1109/IPC47351.2020.9252377

DO - 10.1109/IPC47351.2020.9252377

M3 - Conference Paper published in a book

AN - SCOPUS:85097865862

T3 - 2020 IEEE Photonics Conference, IPC 2020 - Proceedings

BT - 2020 IEEE Photonics Conference, IPC 2020 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE Photonics Conference, IPC 2020

Y2 - 28 September 2020 through 1 October 2020

ER -

P-type Doping of Dilute-Anion III-Nitride Materials

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