TY - GEN
T1 - P-type ZnS, ZnSe, CdS and CdSe thin films growth by pulsed laser deposition
AU - Shen, W. P.
AU - Kwok, H. S.
PY - 1994
Y1 - 1994
N2 - This paper explored the potential of a pulsed excimer laser deposition as an efficient technique to yield p-type doped II-VI compounds ZnS, ZnSe, CdS and CdSe thin films. Impurities such as Lithium, for p-type, and indium, for n-type, were introduced into the thin films during deposition on either GaAs or InP single crystal wafers. Carrier concentration was altered by changing the quantity of impurity added into the film. This technique spawned the p-n junctions of these media.
AB - This paper explored the potential of a pulsed excimer laser deposition as an efficient technique to yield p-type doped II-VI compounds ZnS, ZnSe, CdS and CdSe thin films. Impurities such as Lithium, for p-type, and indium, for n-type, were introduced into the thin films during deposition on either GaAs or InP single crystal wafers. Carrier concentration was altered by changing the quantity of impurity added into the film. This technique spawned the p-n junctions of these media.
UR - https://www.scopus.com/pages/publications/0028017218
M3 - Conference Paper published in a book
AN - SCOPUS:0028017218
SN - 0780319710
T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting
SP - 394
EP - 395
BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting
PB - Publ by IEEE
T2 - Proceedings of the Conference on Lasers and Electro-Optics
Y2 - 8 May 1994 through 13 May 1994
ER -