Parallel field magnetoresistance in topological insulator thin films

C. J. Lin; X. Y. He; J. Liao; X. X. Wang; V. Sacksteder Iv; W. M. Yang; T. Guan; Q. M. Zhang; L. Gu; G. Y. Zhang; C. G. Zeng; X. Dai; K. H. Wu; Y. Q. Li

doi:10.1103/PhysRevB.88.041307

Parallel field magnetoresistance in topological insulator thin films

C. J. Lin^*, X. Y. He, J. Liao, X. X. Wang, V. Sacksteder Iv, W. M. Yang, T. Guan, Q. M. Zhang, L. Gu, G. Y. Zhang, C. G. Zeng, X. Dai, K. H. Wu, Y. Q. Li

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

66 Citations (Scopus)

Abstract

We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi ₂Se₃ and (Bi_1-xSb_x) ₂Te₃ thin films are compared with existing theoretical models of parallel field magnetotransport. We conclude that the TI thin films bring parallel field transport into a unique regime in which the coupling of surface states to bulk and to opposite surfaces is indispensable for understanding the observed MR. The β parameter extracted from parallel field MR can in principle provide a figure of merit for searching TI compounds with more insulating bulk than existing materials.

Original language	English
Article number	041307
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	88
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.88.041307
Publication status	Published - 22 Jul 2013
Externally published	Yes

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title = "Parallel field magnetoresistance in topological insulator thin films",

abstract = "We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi 2Se3 and (Bi1-xSbx) 2Te3 thin films are compared with existing theoretical models of parallel field magnetotransport. We conclude that the TI thin films bring parallel field transport into a unique regime in which the coupling of surface states to bulk and to opposite surfaces is indispensable for understanding the observed MR. The β parameter extracted from parallel field MR can in principle provide a figure of merit for searching TI compounds with more insulating bulk than existing materials.",

author = "Lin, \{C. J.\} and He, \{X. Y.\} and J. Liao and Wang, \{X. X.\} and Iv, \{V. Sacksteder\} and Yang, \{W. M.\} and T. Guan and Zhang, \{Q. M.\} and L. Gu and Zhang, \{G. Y.\} and Zeng, \{C. G.\} and X. Dai and Wu, \{K. H.\} and Li, \{Y. Q.\}",

year = "2013",

month = jul,

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doi = "10.1103/PhysRevB.88.041307",

language = "English",

volume = "88",

journal = "Physical Review B - Condensed Matter and Materials Physics",

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T1 - Parallel field magnetoresistance in topological insulator thin films

AU - Lin, C. J.

AU - He, X. Y.

AU - Liao, J.

AU - Wang, X. X.

AU - Iv, V. Sacksteder

AU - Yang, W. M.

AU - Guan, T.

AU - Zhang, Q. M.

AU - Gu, L.

AU - Zhang, G. Y.

AU - Zeng, C. G.

AU - Dai, X.

AU - Wu, K. H.

AU - Li, Y. Q.

PY - 2013/7/22

Y1 - 2013/7/22

N2 - We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi 2Se3 and (Bi1-xSbx) 2Te3 thin films are compared with existing theoretical models of parallel field magnetotransport. We conclude that the TI thin films bring parallel field transport into a unique regime in which the coupling of surface states to bulk and to opposite surfaces is indispensable for understanding the observed MR. The β parameter extracted from parallel field MR can in principle provide a figure of merit for searching TI compounds with more insulating bulk than existing materials.

AB - We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi 2Se3 and (Bi1-xSbx) 2Te3 thin films are compared with existing theoretical models of parallel field magnetotransport. We conclude that the TI thin films bring parallel field transport into a unique regime in which the coupling of surface states to bulk and to opposite surfaces is indispensable for understanding the observed MR. The β parameter extracted from parallel field MR can in principle provide a figure of merit for searching TI compounds with more insulating bulk than existing materials.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000322113300002

UR - https://openalex.org/W2094752634

UR - https://www.scopus.com/pages/publications/84881167339

U2 - 10.1103/PhysRevB.88.041307

DO - 10.1103/PhysRevB.88.041307

M3 - Journal Article

SN - 1098-0121

VL - 88

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 4

M1 - 041307

ER -

Parallel field magnetoresistance in topological insulator thin films

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