TY - JOUR
T1 - Passivation of Poly-Si Thin Film Employing Si Self-Implantation and Its Application to TFTs
AU - Chen, Rongsheng
AU - Zhou, Wei
AU - Deng, Sunbin
AU - Zhang, Meng
AU - Wong, Man
AU - Kwok, Hoi Sing
N1 - Publisher Copyright:
© 2013 IEEE.
PY - 2018/1/22
Y1 - 2018/1/22
N2 - Silicon self-implantation technique is applied to passivate the defects in the grain boundaries of the polycrystalline silicon (poly-Si) thin film. The implantation of Si with low dose is a precise technique of introducing Si interstitials in the poly-Si thin film. Thin film transistors fabricated on the resulting poly-Si thin film exhibit improved device characteristics. The increased field-effect mobility is attributed to the incorporation of the injected silicon interstitials in the grain boundaries of the poly-Si thin film and reduction of defect density.
AB - Silicon self-implantation technique is applied to passivate the defects in the grain boundaries of the polycrystalline silicon (poly-Si) thin film. The implantation of Si with low dose is a precise technique of introducing Si interstitials in the poly-Si thin film. Thin film transistors fabricated on the resulting poly-Si thin film exhibit improved device characteristics. The increased field-effect mobility is attributed to the incorporation of the injected silicon interstitials in the grain boundaries of the poly-Si thin film and reduction of defect density.
KW - Silicon self-implantation
KW - polycrystalline silicon
KW - thin-film transistors (TFTs)
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000428654200002
UR - https://openalex.org/W2786125435
UR - https://www.scopus.com/pages/publications/85040999310
U2 - 10.1109/JEDS.2018.2796238
DO - 10.1109/JEDS.2018.2796238
M3 - Journal Article
SN - 2168-6734
VL - 6
SP - 240
EP - 244
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
IS - 1
M1 - 8267190
ER -