Photoluminescence and infrared absorption study of isoelectronic impurity passivation by hydrogen

M. Capizzi; A. Polimeni; G. Baldassarri Högher von Höghersthal; M. Bissiri; A. Amore Bonapasta; F. Jiang; M. Stavola; M. Fischer; A. Forchel; I. K. Sou; W. K. Ge

doi:10.1557/proc-719-f9.4

Photoluminescence and infrared absorption study of isoelectronic impurity passivation by hydrogen

M. Capizzi^*, A. Polimeni, G. Baldassarri Högher von Höghersthal, M. Bissiri, A. Amore Bonapasta, F. Jiang, M. Stavola, M. Fischer, A. Forchel, I. K. Sou, W. K. Ge

^*Corresponding author for this work

Research output: Contribution to journal › Conference article published in journal › peer-review

3 Citations (Scopus)

Abstract

The effects of H irradiation and thermal annealing on the optical properties of (InGa)(AsN) heterostructures have been investigated by photoluminescence (PL) and infrared absorption, as well as by theoretical methods. It has been found that different N clusters contribute to the band gap red-shift reported for (InGa)(AsN) alloys, with a sizable localization of the carrier wavefunctions around N atoms. Infrared absorption measurements indicate that two different N-H complexes are formed, whose vibrational frequencies are in good agreement with theoretical estimates. The ability of hydrogen to passivate different isoelectronic impurities is confirmed by PL results in H irradiated Zn(STe).

Original language	English
Pages (from-to)	251-256
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	719
DOIs	https://doi.org/10.1557/proc-719-f9.4
Publication status	Published - 2002
Externally published	Yes
Event	Defect and Impunity Engineered Semiconductors and Devices III - San Francisco, CA, United States Duration: 1 Apr 2002 → 5 Apr 2002

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Capizzi, M., Polimeni, A., Baldassarri Högher von Höghersthal, G., Bissiri, M., Amore Bonapasta, A., Jiang, F., Stavola, M., Fischer, M., Forchel, A., Sou, I. K., & Ge, W. K. (2002). Photoluminescence and infrared absorption study of isoelectronic impurity passivation by hydrogen. Materials Research Society Symposium - Proceedings, 719, 251-256. https://doi.org/10.1557/proc-719-f9.4

@article{cad8e456bcc34d5a89a7794c5aafaffd,

title = "Photoluminescence and infrared absorption study of isoelectronic impurity passivation by hydrogen",

abstract = "The effects of H irradiation and thermal annealing on the optical properties of (InGa)(AsN) heterostructures have been investigated by photoluminescence (PL) and infrared absorption, as well as by theoretical methods. It has been found that different N clusters contribute to the band gap red-shift reported for (InGa)(AsN) alloys, with a sizable localization of the carrier wavefunctions around N atoms. Infrared absorption measurements indicate that two different N-H complexes are formed, whose vibrational frequencies are in good agreement with theoretical estimates. The ability of hydrogen to passivate different isoelectronic impurities is confirmed by PL results in H irradiated Zn(STe).",

author = "M. Capizzi and A. Polimeni and \{Baldassarri H{\"o}gher von H{\"o}ghersthal\}, G. and M. Bissiri and \{Amore Bonapasta\}, A. and F. Jiang and M. Stavola and M. Fischer and A. Forchel and Sou, \{I. K.\} and Ge, \{W. K.\}",

year = "2002",

doi = "10.1557/proc-719-f9.4",

language = "English",

volume = "719",

pages = "251--256",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Defect and Impunity Engineered Semiconductors and Devices III ; Conference date: 01-04-2002 Through 05-04-2002",

}

Capizzi, M, Polimeni, A, Baldassarri Högher von Höghersthal, G, Bissiri, M, Amore Bonapasta, A, Jiang, F, Stavola, M, Fischer, M, Forchel, A, Sou, IK & Ge, WK 2002, 'Photoluminescence and infrared absorption study of isoelectronic impurity passivation by hydrogen', Materials Research Society Symposium - Proceedings, vol. 719, pp. 251-256. https://doi.org/10.1557/proc-719-f9.4

TY - JOUR

T1 - Photoluminescence and infrared absorption study of isoelectronic impurity passivation by hydrogen

AU - Capizzi, M.

AU - Polimeni, A.

AU - Baldassarri Högher von Höghersthal, G.

AU - Bissiri, M.

AU - Amore Bonapasta, A.

AU - Jiang, F.

AU - Stavola, M.

AU - Fischer, M.

AU - Forchel, A.

AU - Sou, I. K.

AU - Ge, W. K.

PY - 2002

Y1 - 2002

N2 - The effects of H irradiation and thermal annealing on the optical properties of (InGa)(AsN) heterostructures have been investigated by photoluminescence (PL) and infrared absorption, as well as by theoretical methods. It has been found that different N clusters contribute to the band gap red-shift reported for (InGa)(AsN) alloys, with a sizable localization of the carrier wavefunctions around N atoms. Infrared absorption measurements indicate that two different N-H complexes are formed, whose vibrational frequencies are in good agreement with theoretical estimates. The ability of hydrogen to passivate different isoelectronic impurities is confirmed by PL results in H irradiated Zn(STe).

AB - The effects of H irradiation and thermal annealing on the optical properties of (InGa)(AsN) heterostructures have been investigated by photoluminescence (PL) and infrared absorption, as well as by theoretical methods. It has been found that different N clusters contribute to the band gap red-shift reported for (InGa)(AsN) alloys, with a sizable localization of the carrier wavefunctions around N atoms. Infrared absorption measurements indicate that two different N-H complexes are formed, whose vibrational frequencies are in good agreement with theoretical estimates. The ability of hydrogen to passivate different isoelectronic impurities is confirmed by PL results in H irradiated Zn(STe).

UR - https://openalex.org/W2280629364

UR - https://www.scopus.com/pages/publications/0036449887

U2 - 10.1557/proc-719-f9.4

DO - 10.1557/proc-719-f9.4

M3 - Conference article published in journal

SN - 0272-9172

VL - 719

SP - 251

EP - 256

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Defect and Impunity Engineered Semiconductors and Devices III

Y2 - 1 April 2002 through 5 April 2002

ER -

Photoluminescence and infrared absorption study of isoelectronic impurity passivation by hydrogen

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