Abstract
An enhanced BSIM3 non-quasi-static (NQS) model for the large signal transient has been developed. The enhancement followed the same device topology adopted in the BSIM3 NQS model with the addition of a unified equation for the transient gate and substrate current in both the accumulation and inversion operation region. During strong inversion, existing relaxation time approach is used to model the NQS effect, while in the accumulation region, the MOS transistor behaviors like a MOS capacitor without the source and drain region. The dynamic conversion among the accumulation, depletion and inversion charges is modeled to give the transient substrate and gate current. The enhancement has been implemented in the newly released BSIM3 version 3.2, and comparison has made with result obtained from 2-D device simulator. The time penalty for using the new enhancement is about 18% more than the original model.
| Original language | English |
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| Pages | 114-117 |
| Number of pages | 4 |
| Publication status | Published - 1999 |
| Event | 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong Duration: 26 Jun 1999 → 26 Jun 1999 |
Conference
| Conference | 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) |
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| City | Shatin, Hong Kong |
| Period | 26/06/99 → 26/06/99 |