Abstract
The physical behavior of Pd in p-type silicon is reported. The nature of its two main energy levels, H(0. 16) and H(0. 33), has been identified.
| Original language | English |
|---|---|
| Pages (from-to) | 312-315 |
| Number of pages | 4 |
| Journal | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
| Volume | 8 |
| Issue number | 3 |
| Publication status | Published - May 1987 |
| Externally published | Yes |