Physical modeling of spiral inductors on silicon

C. Patrick Yue; S. Simon Wong

doi:10.1109/16.824729

Physical modeling of spiral inductors on silicon

C. Patrick Yue, S. Simon Wong

Research output: Contribution to journal › Journal Article › peer-review

778 Citations (Scopus)

Abstract

This paper presents a physical model for planar spiral inductors on silicon, which accounts for eddy current effect in the conductor, crossover capacitance between the spiral and center-tap, capacitance between the spiral and substrate, substrate ohmic loss, and substrate capacitance. The model has been confirmed with measured results of inductors having a wide range of layout and process parameters. This scalable inductor model enables the prediction and optimization of inductor performance.

Original language	English
Pages (from-to)	560-568
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	47
Issue number	3
DOIs	https://doi.org/10.1109/16.824729
Publication status	Published - 2000
Externally published	Yes

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10.1109/16.824729

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title = "Physical modeling of spiral inductors on silicon",

abstract = "This paper presents a physical model for planar spiral inductors on silicon, which accounts for eddy current effect in the conductor, crossover capacitance between the spiral and center-tap, capacitance between the spiral and substrate, substrate ohmic loss, and substrate capacitance. The model has been confirmed with measured results of inductors having a wide range of layout and process parameters. This scalable inductor model enables the prediction and optimization of inductor performance.",

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AB - This paper presents a physical model for planar spiral inductors on silicon, which accounts for eddy current effect in the conductor, crossover capacitance between the spiral and center-tap, capacitance between the spiral and substrate, substrate ohmic loss, and substrate capacitance. The model has been confirmed with measured results of inductors having a wide range of layout and process parameters. This scalable inductor model enables the prediction and optimization of inductor performance.

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UR - https://openalex.org/W2160428624

UR - https://www.scopus.com/pages/publications/0033875648

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DO - 10.1109/16.824729

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SP - 560

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

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Physical modeling of spiral inductors on silicon

Abstract

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