Piezoelectric properties of micro-machined cantilever PLZT thin films

Chih Hsing Cheng; Yuhuan Xu; Hilary B. Cherry; Justine Tseng; Greg Um; Weijia Wen; John D. Mackenzie

doi:10.1080/00150199908015787

Piezoelectric properties of micro-machined cantilever PLZT thin films

Chih Hsing Cheng^*, Yuhuan Xu, Hilary B. Cherry, Justine Tseng, Greg Um, Weijia Wen, John D. Mackenzie

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

6 Citations (Scopus)

Abstract

A cantilever actuator of piezoelectric thin films was fabricated on Si wafer for micro-electro-mechanical-system (MEMS) devices such as micro mirror array and accelerometer. The piezoelectric thin films, La doped lead zirconate titanate, (PLZT) were prepared on Pt/Ti/SiO₂/Si-wafer by the sol-gel technique. Geometrically flat cantilevers were obtained using a stress balance layer. Electrical properties, dielectric constants and breakdown fields, of PLZT thin film were studied. The piezoelectric cantilever tip displacement, 6μm, was directly measured by laser interferometer on a 90 μm long cantilever at 10V.

Original language	English
Pages (from-to)	159-164
Number of pages	6
Journal	Ferroelectrics
Volume	232
Issue number	1-4
DOIs	https://doi.org/10.1080/00150199908015787
Publication status	Published - 1999
Externally published	Yes

Keywords

MEMS
PZT
Piezoelectric

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10.1080/00150199908015787

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@article{70861949302d4aa7a968a85d2c5da3fe,

title = "Piezoelectric properties of micro-machined cantilever PLZT thin films",

abstract = "A cantilever actuator of piezoelectric thin films was fabricated on Si wafer for micro-electro-mechanical-system (MEMS) devices such as micro mirror array and accelerometer. The piezoelectric thin films, La doped lead zirconate titanate, (PLZT) were prepared on Pt/Ti/SiO2/Si-wafer by the sol-gel technique. Geometrically flat cantilevers were obtained using a stress balance layer. Electrical properties, dielectric constants and breakdown fields, of PLZT thin film were studied. The piezoelectric cantilever tip displacement, 6μm, was directly measured by laser interferometer on a 90 μm long cantilever at 10V.",

keywords = "MEMS, PZT, Piezoelectric",

author = "Cheng, \{Chih Hsing\} and Yuhuan Xu and Cherry, \{Hilary B.\} and Justine Tseng and Greg Um and Weijia Wen and Mackenzie, \{John D.\}",

year = "1999",

doi = "10.1080/00150199908015787",

language = "English",

volume = "232",

pages = "159--164",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

}

TY - JOUR

T1 - Piezoelectric properties of micro-machined cantilever PLZT thin films

AU - Cheng, Chih Hsing

AU - Xu, Yuhuan

AU - Cherry, Hilary B.

AU - Tseng, Justine

AU - Um, Greg

AU - Wen, Weijia

AU - Mackenzie, John D.

PY - 1999

Y1 - 1999

N2 - A cantilever actuator of piezoelectric thin films was fabricated on Si wafer for micro-electro-mechanical-system (MEMS) devices such as micro mirror array and accelerometer. The piezoelectric thin films, La doped lead zirconate titanate, (PLZT) were prepared on Pt/Ti/SiO2/Si-wafer by the sol-gel technique. Geometrically flat cantilevers were obtained using a stress balance layer. Electrical properties, dielectric constants and breakdown fields, of PLZT thin film were studied. The piezoelectric cantilever tip displacement, 6μm, was directly measured by laser interferometer on a 90 μm long cantilever at 10V.

AB - A cantilever actuator of piezoelectric thin films was fabricated on Si wafer for micro-electro-mechanical-system (MEMS) devices such as micro mirror array and accelerometer. The piezoelectric thin films, La doped lead zirconate titanate, (PLZT) were prepared on Pt/Ti/SiO2/Si-wafer by the sol-gel technique. Geometrically flat cantilevers were obtained using a stress balance layer. Electrical properties, dielectric constants and breakdown fields, of PLZT thin film were studied. The piezoelectric cantilever tip displacement, 6μm, was directly measured by laser interferometer on a 90 μm long cantilever at 10V.

KW - MEMS

KW - PZT

KW - Piezoelectric

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000165296900025

UR - https://openalex.org/W2051833861

UR - https://www.scopus.com/pages/publications/6044268198

U2 - 10.1080/00150199908015787

DO - 10.1080/00150199908015787

M3 - Journal Article

SN - 0015-0193

VL - 232

SP - 159

EP - 164

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1-4

ER -

Piezoelectric properties of micro-machined cantilever PLZT thin films

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Keywords

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