Planar GaN power integration - The world is flat

Kevin J. Chen; Jin Wei; Gaofei Tang; Han Xu; Zheyang Zheng; Li Zhang; Wenjie Song

doi:10.1109/IEDM13553.2020.9372069

Planar GaN power integration - The world is flat

Kevin J. Chen^*, Jin Wei, Gaofei Tang, Han Xu, Zheyang Zheng, Li Zhang, Wenjie Song

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

73 Citations (Scopus)

Abstract

GaN power IC's are expected to help unlock the full potential of GaN power electronics, especially in terms of promoting the high-frequency power switching applications. This paper first discusses a GaN power integration technology platform based on commercially available p-GaN gate HEMT technology. An integrated gate driver is presented as an example of GaN power IC with enhanced performance, in which a bootstrap unit is adopted to realize rail-to-rail output voltage and fast switching speed. To deal with GaN-specific design issues such as the unique dynamic VTH, a SPICE model of p-GaN gate HEMT is developed to improve design accuracy. Future prospects for GaN power integration are discussed by extending the integration's landscape to multi-functional GaN power devices, GaN CMOS technology, and GaN/SiC hybrid power IC's.

Original language	English
Title of host publication	2020 IEEE International Electron Devices Meeting, IEDM 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	27.1.1-27.1.4
ISBN (Electronic)	9781728188881
DOIs	https://doi.org/10.1109/IEDM13553.2020.9372069
Publication status	Published - 12 Dec 2020
Event	66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States Duration: 12 Dec 2020 → 18 Dec 2020

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2020-December
ISSN (Print)	0163-1918

Conference

Conference	66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/Territory	United States
City	Virtual, San Francisco
Period	12/12/20 → 18/12/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

Access to Document

10.1109/IEDM13553.2020.9372069

Cite this

Chen, K. J., Wei, J., Tang, G., Xu, H., Zheng, Z., Zhang, L., & Song, W. (2020). Planar GaN power integration - The world is flat. In 2020 IEEE International Electron Devices Meeting, IEDM 2020 (pp. 27.1.1-27.1.4). Article 9372069 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM13553.2020.9372069

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title = "Planar GaN power integration - The world is flat",

abstract = "GaN power IC's are expected to help unlock the full potential of GaN power electronics, especially in terms of promoting the high-frequency power switching applications. This paper first discusses a GaN power integration technology platform based on commercially available p-GaN gate HEMT technology. An integrated gate driver is presented as an example of GaN power IC with enhanced performance, in which a bootstrap unit is adopted to realize rail-to-rail output voltage and fast switching speed. To deal with GaN-specific design issues such as the unique dynamic VTH, a SPICE model of p-GaN gate HEMT is developed to improve design accuracy. Future prospects for GaN power integration are discussed by extending the integration's landscape to multi-functional GaN power devices, GaN CMOS technology, and GaN/SiC hybrid power IC's.",

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doi = "10.1109/IEDM13553.2020.9372069",

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series = "Technical Digest - International Electron Devices Meeting, IEDM",

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Chen, KJ, Wei, J, Tang, G, Xu, H, Zheng, Z, Zhang, L & Song, W 2020, Planar GaN power integration - The world is flat. in 2020 IEEE International Electron Devices Meeting, IEDM 2020., 9372069, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2020-December, Institute of Electrical and Electronics Engineers Inc., pp. 27.1.1-27.1.4, 66th Annual IEEE International Electron Devices Meeting, IEDM 2020, Virtual, San Francisco, United States, 12/12/20. https://doi.org/10.1109/IEDM13553.2020.9372069

Planar GaN power integration - The world is flat. / Chen, Kevin J.; Wei, Jin; Tang, Gaofei et al.
2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 27.1.1-27.1.4 9372069 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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AU - Chen, Kevin J.

AU - Wei, Jin

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AU - Zhang, Li

AU - Song, Wenjie

PY - 2020/12/12

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N2 - GaN power IC's are expected to help unlock the full potential of GaN power electronics, especially in terms of promoting the high-frequency power switching applications. This paper first discusses a GaN power integration technology platform based on commercially available p-GaN gate HEMT technology. An integrated gate driver is presented as an example of GaN power IC with enhanced performance, in which a bootstrap unit is adopted to realize rail-to-rail output voltage and fast switching speed. To deal with GaN-specific design issues such as the unique dynamic VTH, a SPICE model of p-GaN gate HEMT is developed to improve design accuracy. Future prospects for GaN power integration are discussed by extending the integration's landscape to multi-functional GaN power devices, GaN CMOS technology, and GaN/SiC hybrid power IC's.

AB - GaN power IC's are expected to help unlock the full potential of GaN power electronics, especially in terms of promoting the high-frequency power switching applications. This paper first discusses a GaN power integration technology platform based on commercially available p-GaN gate HEMT technology. An integrated gate driver is presented as an example of GaN power IC with enhanced performance, in which a bootstrap unit is adopted to realize rail-to-rail output voltage and fast switching speed. To deal with GaN-specific design issues such as the unique dynamic VTH, a SPICE model of p-GaN gate HEMT is developed to improve design accuracy. Future prospects for GaN power integration are discussed by extending the integration's landscape to multi-functional GaN power devices, GaN CMOS technology, and GaN/SiC hybrid power IC's.

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Planar GaN power integration - The world is flat

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