Abstract
A GaN/SiC hybrid field-effect transistor (HyFET) is proposed as a high-voltage power device that provides a high-mobility lateral AlGaN/GaN channel to reduce the channel resistance and a vertical SiC drift region to sustain the high OFF-state voltage. The performance of the HyFET is evaluated by numerical device simulations. Compared with the conventional SiC MOSFET, the HyFET exhibits a greatly reduced $R-{\mathrm{\scriptscriptstyle ON}}$ together with a low $C-{\mathrm{ GD}}$ and low gate charges. The figures of merit $Q-{\mathrm{ G}}\times R-{\mathrm{\scriptscriptstyle ON}}$ and $Q-{\mathrm{ GD}}\times R-{\mathrm{\scriptscriptstyle ON}}$ of the HyFET are dramatically improved.
| Original language | English |
|---|---|
| Article number | 7466844 |
| Pages (from-to) | 2469-2473 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 63 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Jun 2016 |
Bibliographical note
Publisher Copyright:© 1963-2012 IEEE.
Keywords
- GaN/SiC
- gate charge
- high-electron-mobility transistor (HEMT)
- hybrid field-effect transistor (HyFET)
- reverse transfer capacitance.