Quantum resonant tunneling effect and multi-value logic memory

Ruigang Li; Jiannong Wang; Yuqi Wang; Wenfu Dong; Dexin Wu

Quantum resonant tunneling effect and multi-value logic memory

Ruigang Li^*, Jiannong Wang, Yuqi Wang, Wenfu Dong, Dexin Wu

^*Corresponding author for this work

Research output: Contribution to conference › Conference Paper › peer-review

1 Citation (Scopus)

Abstract

A novel fabrication process, based on selective wet etching and GaAs air-bridge was developed to produce AlAs/GaAs, AlAs/InAs/GaAs quantum dots double berrier quantum well sub-micron resonant tunneling diodes (RTD), and the peak to valley current ratio could be over 20. A new model of multilevel logic SRAM with RTDs was proposed.

Original language	English
Pages	588-589
Number of pages	2
Publication status	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 21 Oct 1998 → 23 Oct 1998

Conference

Conference	Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
City	Beijing, China
Period	21/10/98 → 23/10/98

Cite this

@conference{b9fe4120266545b28827280c08706dd6,

title = "Quantum resonant tunneling effect and multi-value logic memory",

abstract = "A novel fabrication process, based on selective wet etching and GaAs air-bridge was developed to produce AlAs/GaAs, AlAs/InAs/GaAs quantum dots double berrier quantum well sub-micron resonant tunneling diodes (RTD), and the peak to valley current ratio could be over 20. A new model of multilevel logic SRAM with RTDs was proposed.",

author = "Ruigang Li and Jiannong Wang and Yuqi Wang and Wenfu Dong and Dexin Wu",

year = "1998",

language = "English",

pages = "588--589",

note = "Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 21-10-1998 Through 23-10-1998",

}

TY - CONF

T1 - Quantum resonant tunneling effect and multi-value logic memory

AU - Li, Ruigang

AU - Wang, Jiannong

AU - Wang, Yuqi

AU - Dong, Wenfu

AU - Wu, Dexin

PY - 1998

Y1 - 1998

N2 - A novel fabrication process, based on selective wet etching and GaAs air-bridge was developed to produce AlAs/GaAs, AlAs/InAs/GaAs quantum dots double berrier quantum well sub-micron resonant tunneling diodes (RTD), and the peak to valley current ratio could be over 20. A new model of multilevel logic SRAM with RTDs was proposed.

AB - A novel fabrication process, based on selective wet etching and GaAs air-bridge was developed to produce AlAs/GaAs, AlAs/InAs/GaAs quantum dots double berrier quantum well sub-micron resonant tunneling diodes (RTD), and the peak to valley current ratio could be over 20. A new model of multilevel logic SRAM with RTDs was proposed.

UR - https://www.scopus.com/pages/publications/0032226679

M3 - Conference Paper

AN - SCOPUS:0032226679

SP - 588

EP - 589

T2 - Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 21 October 1998 through 23 October 1998

ER -

Quantum resonant tunneling effect and multi-value logic memory

Abstract

Conference

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